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MJ11028G

Onsemi

MJ11028G by Onsemi

MJ11028G by Onsemi is a NPN power BJT with 300W power dissipation, 60V max collector-emitter voltage, and 50A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with bottom terminal position.

Median Price

$19.345

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 23 parts In-Stock

1+ parts

$15.250

100+ parts

$9.790

1k+ parts

$9.590

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-

23

$15.250

$9.790

$9.590

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Mouser Electronics

USA . 201 parts In-Stock

1+ parts

$19.310

100+ parts

$11.370

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-

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201

$19.310

$11.370

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-

Newark

USA . 23 parts In-Stock

1+ parts

$19.380

100+ parts

$11.880

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-

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23

$19.380

$11.880

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DigiKey

USA . 985 parts In-Stock

1+ parts

$21.310

100+ parts

$11.861

1k+ parts

$11.375

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985

$21.310

$11.861

$11.375

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Element14

Singapore . 23 parts In-Stock

1+ parts

$25.630

100+ parts

$16.450

1k+ parts

$16.130

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-

23

$25.630

$16.450

$16.130

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Chip1Stop

Japan . 88 parts In-Stock

1+ parts

$42.600

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-

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88

$42.600

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Rochester

USA . 74,913 parts In-Stock

1+ parts

-

100+ parts

$11.380

1k+ parts

$10.180

10k+ parts

$9.580

74,913

-

$11.380

$10.180

$9.580

Verical

USA . 40,400 parts In-Stock

1+ parts

-

100+ parts

$14.225

1k+ parts

$12.725

10k+ parts

$11.975

40,400

-

$14.225

$12.725

$11.975

Flip Electronics (Authorized)

USA . 285 parts In-Stock

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-

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-

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285

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Distributors (In-Stock)

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Digiode

USA . 797 parts In-Stock

1+ parts

$12.008

100+ parts

-

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797

$12.008

-

-

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Vyrian

USA . 743 parts In-Stock

1+ parts

$12.640

100+ parts

-

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-

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743

$12.640

-

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Bristol Electronics

USA . 4,825 parts In-Stock

1+ parts

-

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4,825

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DigiKey Marketplace

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Flip Electronics

USA . 785 parts In-Stock

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785

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EMSNET

USA . 401 parts In-Stock

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401

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Distributors (Availability)

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Corphita

USA . 130 parts In-Stock

1+ parts

$11.376

100+ parts

-

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130

$11.376

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Corohmni

South Africa . 383 parts In-Stock

1+ parts

$12.640

100+ parts

-

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383

$12.640

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Continental Prestige Electronics

USA . 54 parts In-Stock

1+ parts

$12.990

100+ parts

$7.730

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54

$12.990

$7.730

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QUARKTWIN TECHNOLOGY LTD

USA . 23,648 parts In-Stock

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23,648

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Microchip USA

USA . 8,337 parts In-Stock

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8,337

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Perfect Parts

USA . 5,992 parts In-Stock

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5,992

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SupplyDigital Components

Austria . 5,829 parts In-Stock

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5,829

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TANS Electronics

Latvia . 4,832 parts In-Stock

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4,832

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Kulean Microsystems

USA . 4,358 parts In-Stock

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4,358

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UHIMA Technologies

Türkiye . 922 parts In-Stock

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922

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Problanco Electronics

Mexico . 471 parts In-Stock

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471

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Authorized Procurement Solutions

USA . 88 parts In-Stock

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88

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GreenTree Electronics

Israel . 88 parts In-Stock

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88

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT)? Look no further than the MJ11028G by Onsemi. With a maximum power dissipation of 300W and a maximum collector current of 50A, this NPN transistor is perfect for amplifier applications. Its Darlington configuration with built-in diode and resistor ensures optimal performance and efficiency. Onsemi's reputation for excellence and innovation guarantees that you're getting a top-notch product that will meet your needs. Upgrade your projects with the MJ11028G and experience the unmatched value and benefits it provides.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity, ensuring efficient heat dissipation and improving the overall reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and reliability.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain, while the built-in diode and resistor simplify circuit design and reduce external component count.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in audio and other signal amplification circuits.

Terminal Form: PIN/PEG

Pin/peg terminals provide secure and reliable connections, making installation and soldering easier and more convenient.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability allows for handling heavy loads and ensures the transistor can operate under demanding conditions without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting, suitable for various applications where stability and reliability are crucial.

Minimum DC Current Gain (hFE): 400

High DC current gain ensures consistent and reliable amplification performance in different circuit configurations, reducing signal distortion and improving overall signal quality.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and harsh environmental conditions without compromising its performance and reliability.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor can handle high voltage applications, offering versatility and compatibility with various circuit designs.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliability, high performance, and low leakage current, making them ideal for various electronic applications.

Maximum Collector Current (IC): 50 A

With a high collector current rating, this transistor can handle high current loads with ease, making it suitable for power amplification and switching applications.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance, ensuring reliable connections and long-term performance in various operating conditions.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connections, optimizing PCB layout and simplifying the overall design of electronic circuits.

Case Connection: COLLECTOR

Collector connection is convenient for circuit design and layout, offering easy integration and compatibility with various amplifier circuits and applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11028G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MJ11028G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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