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MJ11013

Onsemi

MJ11013 by Onsemi

The Onsemi MJ11013 is a PNP BJT with Darlington configuration, ideal for amplifier applications. It features a max power dissipation of 200W, hFE of 200, and max collector current of 30A. With a max operating temp of 200°C and Vce of 90V, it offers reliable performance in various high-power circuits.

Median Price

$21.250

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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TEDSS.com

USA . 201 parts In-Stock

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$15.000

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FDH Electronics

USA . 88 parts In-Stock

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$27.500

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$25.000

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$21.825

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$20.833

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Digiode

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Vyrian

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Anansix

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Bristol Electronics

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Electronic Expediters

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R&J Components

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MISTER SPROCKETS

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ACDS - Activité Composants Distribution Service

France . 67 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Sinequanon

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Fibra_Brandt Electronic GMBH

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Digital Electronic Gebert Verwaltungs UG

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PUI

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First Choice Components Inc.

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LittleDiode

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Standard Data Resources

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IDEA Electronic Components Group

UK . 184 parts In-Stock

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$0.505

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$0.455

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MKK Technologies

India . 668 parts In-Stock

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$0.950

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DigiPath Technology Company

USA . 668 parts In-Stock

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$0.950

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Benley Electronics

USA . 1 parts In-Stock

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Microchip USA

USA . 5,756 parts In-Stock

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Corohmni

South Africa . 433 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Corphita

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Kepictronics

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Kulean Microsystems

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Parana Technologies

USA . 2,294 parts In-Stock

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Aranea Global

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TANS Electronics

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UHIMA Technologies

Türkiye . 141 parts In-Stock

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Problanco Electronics

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Perfect Parts

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GreenTree Electronics

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A-Plus Industry Inc.

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Overview

Upgrade your electronics with the MJ11013 by Onsemi, a high-quality Power BJT transistor designed for amplifier applications. With a maximum power dissipation of 200W and a maximum collector current of 30A, this Darlington transistor offers superior performance and reliability. Manufactured by Onsemi, a trusted industry leader known for innovation and excellence, the MJ11013 delivers exceptional value and benefits to customers looking for a durable and efficient component for their projects. Whether you're creating audio amplifiers or power supplies, the MJ11013 is the perfect choice for all your electronic needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, ensuring efficient heat dissipation and improving the overall reliability and durability of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for audio and other signal amplification applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor simplify circuit design and save component count, making it convenient for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in signal amplification circuits.

Maximum Power Dissipation (Abs): 200 W

The high power dissipation capability allows for handling high power levels without overheating or damaging the transistor, ideal for demanding amplifier applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic devices, ensuring optimal performance in the transistor.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for faster switching speeds, making this transistor suitable for high-frequency amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11013 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11013 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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