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MJ11021G

Onsemi

MJ11021G by Onsemi

The Onsemi MJ11021G is a PNP power BJT with 175W power dissipation, 250V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a max operating temperature of 175°C, it offers reliable performance in various industrial settings.

Median Price

$11.070

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,692 parts In-Stock

1+ parts

$6.160

100+ parts

$6.040

1k+ parts

$5.910

10k+ parts

-

2,692

$6.160

$6.040

$5.910

-

Mouser Electronics

USA . 382 parts In-Stock

1+ parts

$11.070

100+ parts

$8.080

1k+ parts

$7.730

10k+ parts

-

382

$11.070

$8.080

$7.730

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DigiKey

USA . 45 parts In-Stock

1+ parts

$11.070

100+ parts

-

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45

$11.070

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Master Electronics

USA . 200 parts In-Stock

1+ parts

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200

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Flip Electronics (Authorized)

USA . 100 parts In-Stock

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-

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100

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Distributors (In-Stock)

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Digiode

USA . 2,282 parts In-Stock

1+ parts

$5.852

100+ parts

-

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2,282

$5.852

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Vyrian

USA . 1,313 parts In-Stock

1+ parts

$6.160

100+ parts

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1,313

$6.160

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TME

Poland . 26 parts In-Stock

1+ parts

$7.120

100+ parts

$5.280

1k+ parts

-

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26

$7.120

$5.280

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Flip Electronics

USA . 300 parts In-Stock

1+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,755 parts In-Stock

1+ parts

$5.544

100+ parts

-

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1,755

$5.544

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Corohmni

South Africa . 197 parts In-Stock

1+ parts

$6.160

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197

$6.160

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Component Stockers USA

USA . 832 parts In-Stock

1+ parts

$9.520

100+ parts

$6.800

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832

$9.520

$6.800

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Problanco Electronics

Mexico . 4,641 parts In-Stock

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4,641

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SupplyDigital Components

Austria . 4,435 parts In-Stock

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4,435

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QUARKTWIN TECHNOLOGY LTD

USA . 3,931 parts In-Stock

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3,931

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TANS Electronics

Latvia . 2,999 parts In-Stock

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2,999

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Kulean Microsystems

USA . 2,933 parts In-Stock

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2,933

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 829 parts In-Stock

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829

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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789

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Overview

Upgrade your power switching applications with the MJ11021G by Onsemi. Known for their high-quality manufacturing, Onsemi delivers reliable Power Bipolar Junction Transistors (BJT) like this PNP Darlington transistor with a built-in diode and resistor. With a maximum power dissipation of 175 W and a maximum collector-emitter voltage of 250 V, this transistor is ideal for a variety of switching applications. Trust in Onsemi's reputation for excellence and experience the value and benefits that the MJ11021G brings to your projects.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides excellent heat dissipation, ensuring the transistor operates at optimal temperature levels for high performance and reliability.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP transistors in circuits, enhancing compatibility and flexibility in design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design, reduces component count, and saves space on the PCB, making it a cost-effective solution.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for use in power management and control circuits.

Maximum Power Dissipation (Abs): 175 W

With a high maximum power dissipation rating of 175W, this transistor can handle heavy loads and operate reliably under demanding conditions.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage rating of 250V ensures that this transistor can be used in a wide range of high voltage applications without the risk of breakdown.

Nominal Transition Frequency (fT): 6 MHz

The high nominal transition frequency of 6MHz enables fast signal processing and high-frequency operation, making this transistor suitable for RF and high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11021G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11021G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-315-3264, 5961013153264

NIIN

013153264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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