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MJ11029

Onsemi

MJ11029 by Onsemi

MJ11029 by Onsemi is a PNP BJT with Darlington configuration, ideal for amplifier applications. It features a max power dissipation of 300W, hFE of 400, and max collector current of 50A. With a max operating temp of 200 °C and Vce of 60V, it's suitable for high-power amplification tasks.

Median Price

$8.646

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 447 parts In-Stock

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$8.646

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$3.747

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$3.545

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447

$8.646

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Digiode

USA . 2,402 parts In-Stock

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Vyrian

USA . 728 parts In-Stock

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ABC Electronics Ltd.

UK . 70 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 2 parts In-Stock

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LittleDiode

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Digital Electronic Gebert Verwaltungs UG

Germany . 1 parts In-Stock

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Electronic Expediters

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Component Stockers USA

USA . 688 parts In-Stock

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$99.990

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688

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Problanco Electronics

Mexico . 5,027 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 3,171 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 483 parts In-Stock

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Assy Fe

Spain . 140 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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Corohmni

South Africa . 89 parts In-Stock

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ChipstoGo Electronic ltd

UK . 14 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance your electronic projects with the high-quality MJ11029 Power BJT by Onsemi. This PNP Darlington transistor offers a built-in diode and resistor, perfect for amplifier applications. With a maximum power dissipation of 300W and a maximum collector current of 50A, this transistor delivers exceptional performance and reliability. Trust the innovative technology and expertise of Onsemi to bring you cutting-edge components that exceed expectations. Elevate your designs with the MJ11029 and unlock new possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better thermal conductivity which helps in heat dissipation and improves the overall performance and reliability of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and switching applications, making this product suitable for a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in diode and resistor add convenience in circuit design, making this product efficient and cost-effective.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high-performance amplification with low noise and distortion.

Package Shape: ROUND

Round packages are easy to mount and provide uniform current distribution, making them suitable for high-power applications.

Maximum Power Dissipation (Abs): 300 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, ensuring reliability in high-power applications.

Minimum DC Current Gain (hFE): 400

A high DC current gain allows for lower base current and improved efficiency in amplifier circuits, making this product ideal for high-performance applications.

Maximum Operating Temperature: 200 °C

With a high operating temperature range, this transistor can withstand extreme conditions and maintain stable performance in challenging environments.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating makes this transistor suitable for high-voltage applications, providing reliable operation under varying voltage levels.

Maximum Collector Current (IC): 50 A

With a high collector current rating, this transistor can handle large current loads, making it suitable for high-power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable electrical connections, making installation and assembly easy.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11029 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MJ11029 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-293-6456, 5961012936456, 5961-01-228-5251, 5961012285251

NIIN

012936456, 012285251

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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