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MJ11015

Onsemi

MJ11015 by Onsemi

The Onsemi MJ11015 is a PNP BJT with 200W power dissipation, 120V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor. With a transition frequency of 4MHz, it operates b/w -55 to 200°C temperature range.

Median Price

$2.760

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 890 parts In-Stock

1+ parts

$2.480

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$2.060

1k+ parts

$1.690

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890

$2.480

$2.060

$1.690

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Farnell

UK . 1,008 parts In-Stock

1+ parts

$2.760

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$1.280

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$1.030

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1,008

$2.760

$1.280

$1.030

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Element14

Singapore . 1,008 parts In-Stock

1+ parts

$4.780

100+ parts

$2.220

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$1.790

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1,008

$4.780

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$1.790

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Distributors (In-Stock)

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Digiode

USA . 4,368 parts In-Stock

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$1.976

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4,368

$1.976

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TME

Poland . 698 parts In-Stock

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$2.070

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$1.360

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Vyrian

USA . 2,834 parts In-Stock

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$2.080

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2,834

$2.080

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TEDSS.com

USA . 262 parts In-Stock

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$5.000

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$3.990

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262

$5.000

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Component Electronics Inc.

Canada . 4 parts In-Stock

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$5.770

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$4.330

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$3.750

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4

$5.770

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DF Sales Co.

USA . 102 parts In-Stock

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$6.400

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102

$6.400

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DF Sales Co.

USA . 102 parts In-Stock

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$6.400

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American Microsemiconductor Inc.

USA . 1,389 parts In-Stock

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$7.530

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$7.530

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Bristol Electronics

USA . 4,309 parts In-Stock

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$9.050

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$3.921

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$3.710

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Anansix

USA . 1,505 parts In-Stock

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Electronic Expediters

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DigiKey Marketplace

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ComSIT Distribution GmbH

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First Choice Components Inc.

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Atlantic Semiconductor

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Amar Radio Corporation

India . 42 parts In-Stock

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Prism Electronics

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Mil-Aero Solutions, Inc.

USA . 21 parts In-Stock

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Whistler Technology

UK . 20 parts In-Stock

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Resion

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ECAB

Sweden . 18 parts In-Stock

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MISTER SPROCKETS

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Fibra_Brandt Electronic GMBH

Germany . 12 parts In-Stock

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Sinequanon

UK . 12 parts In-Stock

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LWI Electronics Inc

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Manoshevitz Elec. Sales

Israel . 3 parts In-Stock

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GES GmbH

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2 parts In-Stock

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Microfarads

USA . 1 parts In-Stock

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ABC Electronics Ltd.

UK . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,933 parts In-Stock

1+ parts

$1.252

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-

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$1.127

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1,933

$1.252

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$1.127

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Corphita

USA . 1,974 parts In-Stock

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$1.872

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1,974

$1.872

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Corohmni

South Africa . 416 parts In-Stock

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$2.070

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416

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MKK Technologies

India . 571 parts In-Stock

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$2.355

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571

$2.355

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DigiPath Technology Company

USA . 571 parts In-Stock

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$2.355

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571

$2.355

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Continental Prestige Electronics

USA . 1,177 parts In-Stock

1+ parts

$5.130

100+ parts

$2.850

1k+ parts

$1.600

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1,177

$5.130

$2.850

$1.600

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QUARKTWIN TECHNOLOGY LTD

USA . 18,183 parts In-Stock

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Lixinc

USA . 9,612 parts In-Stock

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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Kepictronics

USA . 6,800 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,903 parts In-Stock

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Microchip USA

USA . 4,286 parts In-Stock

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Problanco Electronics

Mexico . 3,115 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Parana Technologies

USA . 2,365 parts In-Stock

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$1.497

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TANS Electronics

Latvia . 2,167 parts In-Stock

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Perfect Parts

USA . 2,154 parts In-Stock

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SupplyDigital Components

Austria . 1,676 parts In-Stock

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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Kulean Microsystems

USA . 242 parts In-Stock

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Eliminating Global Boundries, Inc

USA . 74 parts In-Stock

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A-Plus Industry Inc.

USA . 51 parts In-Stock

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ChipstoGo Electronic ltd

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Assy Fe

Spain . 6 parts In-Stock

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Overview

Unleash the power of the MJ11015 by Onsemi, a high-quality Power BJT that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP Darlington transistor is ideal for amplifier applications. With a built-in diode and resistor, it delivers a maximum power dissipation of 200W and a collector current of 30A. The MJ11015 is designed to meet the demands of today's electronics, providing customers with a valuable solution that ensures optimum efficiency and performance. Experience the difference with the MJ11015 from Onsemi.

Feature Benefit Bullets

Package Body Material: METAL

Provides excellent thermal conductivity and durability, ensuring effective heat dissipation and long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications requiring a PNP-type transistor, offering versatility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor simplify circuit design and reduce external component count, saving space and cost.

Transistor Application: AMPLIFIER

Ideal for use in amplifier circuits, providing high gain and low noise performance.

Terminal Form: PIN/PEG

Easy to connect and solder, ensuring reliable electrical connections.

Maximum Power Dissipation (Abs): 200 W

Capable of handling high power levels, suitable for demanding applications.

Minimum DC Current Gain (hFE): 200

Provides high current gain, ensuring efficient operation in amplifier circuits.

Maximum Operating Temperature: 200 °C

Can operate at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 120 V

Supports high voltage applications, increasing the range of potential uses.

Transistor Element Material: SILICON

Highly reliable and widely used semiconductor material, ensuring consistent performance.

Maximum Collector Current (IC): 30 A

Able to handle high current levels, suitable for power applications.

Terminal Finish: TIN LEAD

Provides good solderability and corrosion resistance for long-term reliability.

Case Connection: COLLECTOR

Simplifies circuit layout and connection, enhancing ease of use.

Nominal Transition Frequency (fT): 4 MHz

Provides high switching speeds, suitable for applications requiring fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11015 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-202-6327, 5961012026327

NIIN

012026327

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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