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MJ11032G

Onsemi

MJ11032G by Onsemi

MJ11032G by Onsemi is a NPN power BJT with 300W Pd, 120V Vce, and 50A Ic. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates b/w -55°C to 200°C, making it suitable for various industrial uses.

Median Price

$16.670

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

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Distrelec

Netherlands . 19 parts In-Stock

1+ parts

$13.673

100+ parts

$10.987

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19

$13.673

$10.987

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Farnell

UK . 253 parts In-Stock

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$13.710

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$7.970

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$7.810

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253

$13.710

$7.970

$7.810

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DigiKey

USA . 4,668 parts In-Stock

1+ parts

$16.670

100+ parts

$9.073

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$8.945

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4,668

$16.670

$9.073

$8.945

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Mouser Electronics

USA . 1,107 parts In-Stock

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$16.670

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$9.070

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1,107

$16.670

$9.070

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Newark

USA . 609 parts In-Stock

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$17.170

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$9.340

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$9.220

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609

$17.170

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$9.220

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Element14

Singapore . 253 parts In-Stock

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$23.700

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$16.400

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$16.080

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253

$23.700

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$16.080

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Chip1Stop

Japan . 12 parts In-Stock

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$29.700

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$29.700

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Master Electronics

USA . 193 parts In-Stock

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$8.850

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$8.680

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$8.680

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Verical

USA . 190 parts In-Stock

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$10.412

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$10.412

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Distributors (In-Stock)

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Nova Conductors

Japan . 59 parts In-Stock

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$10.182

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59

$10.182

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Digiode

USA . 1,659 parts In-Stock

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$10.954

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1,659

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TME

Poland . 55 parts In-Stock

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$12.950

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55

$12.950

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IBS Electronics

USA . 47,981 parts In-Stock

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$13.352

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$18.261

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$12.861

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47,981

$13.352

$18.261

$12.861

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Maritex

Poland . 217 parts In-Stock

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$16.629

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$10.184

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217

$16.629

$10.184

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NAC Semi

USA . 51,200 parts In-Stock

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$26.040

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$26.040

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Sensible Micro Corp

USA . 141 parts In-Stock

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Vyrian

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Speed Components Ltd

Israel . 40 parts In-Stock

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Huijzer Components

Netherlands . 12 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

. 5 parts In-Stock

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

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Distributors (Availability)

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Benley Electronics

USA . 1 parts In-Stock

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$0.750

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-

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1

$0.750

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Aztec Data Supply Inc.

USA . 2,212 parts In-Stock

1+ parts

$0.768

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2,212

$0.768

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Ampacity Inc.

Singapore . 9 parts In-Stock

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$7.090

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9

$7.090

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Corohmni

South Africa . 61 parts In-Stock

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$7.820

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61

$7.820

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Continental Prestige Electronics

USA . 6,514 parts In-Stock

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$10.182

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$9.978

6,514

$10.182

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$9.978

Netroflash

USA . 100 parts In-Stock

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$10.182

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$9.673

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$9.469

100

$10.182

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$9.673

$9.469

Corphita

USA . 2,177 parts In-Stock

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$10.377

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2,177

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Perfect Parts

USA . 84,354 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,629 parts In-Stock

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Microchip USA

USA . 10,112 parts In-Stock

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Authorized Procurement Solutions

USA . 8,461 parts In-Stock

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8,461

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,714 parts In-Stock

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SupplyDigital Components

Austria . 6,161 parts In-Stock

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Problanco Electronics

Mexico . 6,002 parts In-Stock

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Lixinc

USA . 4,355 parts In-Stock

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Argo Parts USA

USA . 4,065 parts In-Stock

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Kulean Microsystems

USA . 2,273 parts In-Stock

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TANS Electronics

Latvia . 2,167 parts In-Stock

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2,167

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RC Electronics

USA . 1,265 parts In-Stock

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$10.390

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$9.480

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$9.200

1,265

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$10.390

$9.480

$9.200

iodParts Technologies Inc.

India . 500 parts In-Stock

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500

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S.R.D Solutions

India . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 426 parts In-Stock

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426

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GreenTree Electronics

Israel . 320 parts In-Stock

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320

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Futuretech Components

Singapore . 104 parts In-Stock

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Kepictronics

USA . 80 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 6 parts In-Stock

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Assy Fe

Spain . 2 parts In-Stock

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Overview

Power up your projects with the MJ11032G by Onsemi, a high-quality Power Bipolar Junction Transistor that delivers reliable performance and durability. Manufactured by Onsemi, a trusted name in electronic components, this NPN transistor is designed for amplifier applications, offering a maximum power dissipation of 300W and a collector current of 50A. With a minimum DC current gain of 400 and a maximum operating temperature of 200°C, the MJ11032G provides exceptional value and benefits to customers looking for a robust and efficient solution for their electronic needs. Trust Onsemi for top-notch quality and performance in every component.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent thermal conductivity, helping to dissipate heat efficiently and improve the overall reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce component count, saving space and enhancing overall efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Maximum Power Dissipation: 300 W

High power dissipation capability allows for reliable operation under demanding conditions, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 400

High DC current gain ensures stable and consistent amplification in various circuit configurations.

Maximum Operating Temperature: 200 °C

Wide operating temperature range allows for reliable performance in extreme temperature environments.

Maximum Collector-Emitter Voltage: 120 V

High collector-emitter voltage rating provides flexibility in circuit design and helps prevent voltage breakdown.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable operation even in cold environments.

Maximum Collector Current (IC): 50 A

High collector current capability makes this transistor suitable for high-power applications that require high current handling.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish provides good conductivity and reliability, ensuring consistent performance over time.

Case Connection: COLLECTOR

Collector connection simplifies circuit layout and ensures proper alignment in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11032G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MJ11032G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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