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ULN2003ANE4

Texas Instruments

ULN2003ANE4 by Texas Instruments

ULN2003ANE4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with through-hole terminals, suitable for complex configurations.

Median Price

$0.342

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 675 parts In-Stock

1+ parts

$0.250

100+ parts

$0.250

1k+ parts

$0.240

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675

$0.250

$0.250

$0.240

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Texas Instruments

USA . 1,925 parts In-Stock

1+ parts

$0.342

100+ parts

$0.232

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$0.119

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$0.119

1,925

$0.342

$0.232

$0.119

$0.119

Mouser Electronics

USA . 1,147 parts In-Stock

1+ parts

$0.530

100+ parts

$0.336

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$0.213

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$0.193

1,147

$0.530

$0.336

$0.213

$0.193

Distributors (In-Stock)

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Digiode

USA . 4,182 parts In-Stock

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$0.238

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4,182

$0.238

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Nova Conductors

Japan . 300 parts In-Stock

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$0.329

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300

$0.329

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Flip Electronics

USA . 625 parts In-Stock

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$1.292

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625

$1.292

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Vyrian

USA . 1,035 parts In-Stock

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1,035

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Vectronix, Inc

USA . 898 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 171 parts In-Stock

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171

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Semtec, LLC

USA . 161 parts In-Stock

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Bristol Electronics

USA . 42 parts In-Stock

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Sea View Technologies

USA . 35 parts In-Stock

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35

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,230 parts In-Stock

1+ parts

$0.212

100+ parts

-

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1,230

$0.212

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Semicontronic

India . 797 parts In-Stock

1+ parts

$0.212

100+ parts

$0.207

1k+ parts

$0.206

10k+ parts

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797

$0.212

$0.207

$0.206

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Corphita

USA . 1,057 parts In-Stock

1+ parts

$0.225

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1,057

$0.225

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Argo Parts USA

USA . 4,999 parts In-Stock

1+ parts

$0.267

100+ parts

-

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10k+ parts

$0.259

4,999

$0.267

-

-

$0.259

Continental Prestige Electronics

USA . 636 parts In-Stock

1+ parts

$0.267

100+ parts

-

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-

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$0.262

636

$0.267

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-

$0.262

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.329

100+ parts

-

1k+ parts

$0.312

10k+ parts

$0.306

1,000

$0.329

-

$0.312

$0.306

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.555

100+ parts

$0.527

1k+ parts

$0.527

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600

$0.555

$0.527

$0.527

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Corohmni

South Africa . 41 parts In-Stock

1+ parts

$1.258

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41

$1.258

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Parana Technologies

USA . 808 parts In-Stock

1+ parts

$1.437

100+ parts

-

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$2.129

10k+ parts

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808

$1.437

-

$2.129

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DigiPath Technology Company

USA . 2,046 parts In-Stock

1+ parts

$1.583

100+ parts

$1.456

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2,046

$1.583

$1.456

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ChromeModa Solutions

Germany . 4,159 parts In-Stock

1+ parts

$1.615

100+ parts

$1.324

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4,159

$1.615

$1.324

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IDEA Electronic Components Group

UK . 475 parts In-Stock

1+ parts

$1.615

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$1.454

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475

$1.615

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$1.454

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Perfect Parts

USA . 6,490 parts In-Stock

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6,490

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Infinite Electronics LLP (Excess)

. 3,884 parts In-Stock

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3,884

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GreenTree Electronics

Israel . 3,875 parts In-Stock

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3,875

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Formix International (Excess)

India . 3,875 parts In-Stock

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3,875

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Microchip USA

USA . 2,758 parts In-Stock

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2,758

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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200

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Overview

Enhance your electronic projects with the ULN2003ANE4 by Texas Instruments. Known for their superior quality and innovation, Texas Instruments delivers reliable solutions for a wide range of applications in the Power Bipolar Junction Transistors category. The ULN2003ANE4 offers unmatched value with its advanced features, making it perfect for switching tasks in various electronic systems. Trust Texas Instruments to provide you with top-notch performance and efficiency for all your electronic needs. Elevate your projects with the ULN2003ANE4 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: COMPLEX

The complex configuration allows for a wider range of applications and functionalities, making this transistor suitable for varied purposes.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into electronic circuits, saving space and ensuring a tidy layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and secure the transistor onto circuit boards, ensuring a reliable connection.

No. of Elements: 7

With 7 elements in the transistor, it offers more functionality and capabilities compared to simpler transistors.

No. of Terminals: 16

Having 16 terminals allows for more connections and flexibility in circuit design, making this transistor suitable for complex circuits.

Package Style (Meter): IN-LINE

The in-line package style makes it easy to align and connect multiple transistors in a row, ideal for certain circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

The high maximum voltage rating allows the transistor to handle a wide range of voltages, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low power consumption, and reliability, making this product a top choice for electronic applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate to low power applications efficiently.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The Ni/Pd/Au terminal finish provides excellent conductivity and corrosion resistance, ensuring stable connections over time.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and make it easier to connect the transistor in different orientations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2003ANE4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2003ANE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-633-2864, 5962016332864

NIIN

016332864

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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