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ULN2002AN

Texas Instruments

ULN2002AN by Texas Instruments

ULN2002AN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon element material.

Median Price

$0.764

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

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Arrow

USA . 87 parts In-Stock

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Adafruit Industries

USA . 60 parts In-Stock

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Chip1Stop

Japan . 1,197 parts In-Stock

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Bürklin Elektronik

Germany . 802 parts In-Stock

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Mouser Electronics

USA . 494 parts In-Stock

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Verical

USA . 1,097 parts In-Stock

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Rochester

USA . 63 parts In-Stock

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Component Electronics Inc.

Canada . 104 parts In-Stock

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Digiode

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TME

Poland . 314 parts In-Stock

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Ace Electronics

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Pride Electronics

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Fibra_Brandt Electronic GMBH

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Holdelec - ElecDif-Pro

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Extreme Components

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Corel Iberica Componentes, S.L.

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LittleDiode

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Lakeland Logistics Inc

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Bristol Electronics

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Kronex Distribution GmbH

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Ack Elektronik San.Tic.Ltd.Sti

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Mentor Electronics Marketing, LLC

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Digital Electronic Gebert Verwaltungs UG

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ABC Electronics Ltd.

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Mil-Aero Solutions, Inc.

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ECAB

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Manoshevitz Elec. Sales

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Resion

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Ampacity Inc.

Singapore . 461 parts In-Stock

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$0.401

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Semicontronic

India . 82 parts In-Stock

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$0.419

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$0.409

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$0.406

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Corphita

USA . 394 parts In-Stock

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$0.444

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Corohmni

South Africa . 179 parts In-Stock

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$0.549

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Continental Prestige Electronics

USA . 4,092 parts In-Stock

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$0.564

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$0.553

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Argo Parts USA

USA . 2,632 parts In-Stock

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$0.564

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$0.548

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$0.548

Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.565

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$0.537

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Aranea Global

USA . 1,000 parts In-Stock

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$0.573

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$0.550

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$0.573

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Modulus Dynamics

Lithuania . 27 parts In-Stock

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$0.627

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$0.620

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$0.602

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Parana Technologies

USA . 433 parts In-Stock

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$0.680

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$1.725

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DigiPath Technology Company

USA . 2,195 parts In-Stock

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$0.749

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$0.689

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ChromeModa Solutions

Germany . 4,547 parts In-Stock

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IDEA Electronic Components Group

UK . 45 parts In-Stock

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Microchip USA

USA . 1,489 parts In-Stock

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Perfect Parts

USA . 22,754 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

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Kepictronics

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Assy Fe

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Robosynatics

Brazil . 300 parts In-Stock

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$3.154

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Cyclops Electronics Ltd (Excess)

UK . 300 parts In-Stock

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Lucentia Tech

USA . 300 parts In-Stock

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$3.154

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$3.154

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Schahn Electronic Components

Germany . 48 parts In-Stock

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Overview

Unlock the power of precision with the ULN2002AN by Texas Instruments. Known for their top-quality products, Texas Instruments delivers excellence in every component. The ULN2002AN falls under the category of Power Bipolar Junction Transistors (BJT), offering unmatched reliability and performance. With applications in switching, this complex transistor provides a maximum VCEsat of 1.6V and a maximum collector-emitter voltage of 50V. Its 16 terminals and 7 elements make it versatile and efficient for various projects. Trust Texas Instruments to bring you cutting-edge technology that meets your needs and exceeds your expectations. Choose the ULN2002AN for unparalleled value and innovation in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility and reliability.

Configuration: COMPLEX

The complex configuration allows for advanced circuit designs and performance optimizations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation and reliable performance.

Maximum VCEsat: 1.6 V

Low VCEsat value reduces power dissipation and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering for robust circuit connections.

Maximum Collector-Emitter Voltage: 50 V

High maximum VCE voltage rating allows for use in a wide range of applications requiring higher voltages.

Maximum Collector Current (IC): 0.5 A

Suitable for applications requiring moderate current handling capability while maintaining efficiency.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides corrosion resistance and ensures reliable electrical connections for enhanced performance and longevity.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connections, allowing for versatile applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2002AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2002AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-627-7498, 5962016277498

NIIN

016277498

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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