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ULN2803APG

Toshiba

ULN2803APG by Toshiba

Toshiba's ULN2803APG is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include hFE of 1000, VCE of 50V, and IC of 0.5A. The package style is in-line with 18 terminals in a rectangular shape.

Median Price

$1.101

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Continental Prestige Electronics

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Aztec Data Supply Inc.

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Kulean Microsystems

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Modulus Dynamics

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Overview

Enhance your electronic projects with the ULN2803APG by Toshiba, a high-quality power bipolar junction transistor that offers exceptional performance and reliability. With Toshiba's renowned reputation for producing top-notch components, this product guarantees superior functionality and longevity. Ideal for switching applications, this transistor features 8 banks of Darlington configuration with built-in diodes and resistors, making it a versatile choice for various projects. Trust in Toshiba to deliver excellence in every aspect, from the package body material to the transistor element material. Upgrade your designs today with the ULN2803APG and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into circuits and compatibility with other components, making this transistor a versatile option.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The darlington configuration with built-in diode and resistor simplifies circuit design and enhances performance, making this transistor ideal for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast response times, making it suitable for a wide range of electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation, making it convenient to incorporate this transistor into various projects.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical connections and makes it easy to solder, ensuring reliable electrical connections in circuit designs.

No. of Elements: 8

With 8 elements included in one package, this transistor offers increased functionality and flexibility for complex circuit requirements.

No. of Terminals: 18

The 18 terminals provide ample connection points for versatile circuit configurations, allowing for customization and adaptability in various applications.

Package Style (Meter): IN-LINE

The in-line package style offers compact and space-saving design, making it suitable for applications where board space is limited.

Minimum DC Current Gain (hFE): 1000

The high minimum DC current gain ensures consistent and stable performance, making this transistor a reliable choice for amplification tasks.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with varying voltage requirements, ensuring robust performance.

Transistor Element Material: SILICON

The use of silicon material in the transistor element provides excellent electrical properties, enhancing reliability and performance in a wide range of operating conditions.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle medium-power applications with ease, making it suitable for various electronic projects.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connection options, allowing for versatile integration into different circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2803APG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T18

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2803APG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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