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MC1413BDR2G

Onsemi

MC1413BDR2G by Onsemi

MC1413BDR2G by Onsemi is a NPN BJT transistor with 1000 min hFE. It operates up to 150°C, handles 50V max collector-emitter voltage, and supports switching applications. The package is small outline with 16 terminals in gull wing form for surface mount assembly.

Median Price

$0.312

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

1+ parts

$0.563

100+ parts

$0.535

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$0.535

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60

$0.563

$0.535

$0.535

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Newark

USA . 10,178 parts In-Stock

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$0.608

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$0.287

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$0.273

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10,178

$0.608

$0.287

$0.273

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Mouser Electronics

USA . 23,537 parts In-Stock

1+ parts

$0.610

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$0.313

1k+ parts

$0.299

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23,537

$0.610

$0.313

$0.299

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DigiKey

USA . 12,472 parts In-Stock

1+ parts

$0.610

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$0.336

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$0.287

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12,472

$0.610

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$0.287

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RS Americas

USA . 350 parts In-Stock

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$0.760

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$0.640

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$0.760

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EBV Elektronik

Germany . 140,000 parts In-Stock

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Arrow

USA . 125,000 parts In-Stock

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Verical

USA . 125,000 parts In-Stock

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Avnet

USA . 70,000 parts In-Stock

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Chip1Stop

Japan . 40,000 parts In-Stock

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Future Electronics

Canada . 32,500 parts In-Stock

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Master Electronics

USA . 19,200 parts In-Stock

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Farnell

UK . 10,221 parts In-Stock

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Element14

Singapore . 10,221 parts In-Stock

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$0.432

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$0.377

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Rochester

USA . 4,933 parts In-Stock

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$0.314

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$0.261

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4,933

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RS (Exports)

UK . 960 parts In-Stock

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$0.312

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Distributors (In-Stock)

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Digiode

USA . 110 parts In-Stock

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$0.265

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Nova Conductors

Japan . 50 parts In-Stock

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$0.347

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Maritex

Poland . 84 parts In-Stock

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$0.388

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$0.207

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$0.195

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$0.176

84

$0.388

$0.207

$0.195

$0.176

TME

Poland . 453 parts In-Stock

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$0.550

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IBS Electronics

USA . 372,200 parts In-Stock

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NAC Semi

USA . 130,000 parts In-Stock

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Flip Electronics

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Chip Stock

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Vyrian

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ComSIT Distribution GmbH

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ComSIT USA

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Sensible Micro Corp

USA . 7,729 parts In-Stock

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Inventory MP

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Bristol Electronics

USA . 2,379 parts In-Stock

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Rebound Electronics

UK . 2,292 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,976 parts In-Stock

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Diverse Electronics

Canada . 1,900 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,495 parts In-Stock

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Prism Electronics

USA . 1,308 parts In-Stock

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Q Components

USA . 900 parts In-Stock

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Semi Source

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Ashlea Components Ltd

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Semicontronic

India . 23,092 parts In-Stock

1+ parts

$0.133

100+ parts

$0.130

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$0.129

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$0.129

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Ampacity Inc.

Singapore . 22,773 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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Corphita

USA . 1,237 parts In-Stock

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Argo Parts USA

USA . 1,148 parts In-Stock

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$0.341

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$0.331

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Aztec Data Supply Inc.

USA . 2,827 parts In-Stock

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$0.399

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2,827

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.563

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$0.535

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$0.535

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60

$0.563

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$0.535

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Benley Electronics

USA . 6 parts In-Stock

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$1.750

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$1.750

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Perfect Parts

USA . 950,477 parts In-Stock

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GreenTree Electronics

Israel . 122,500 parts In-Stock

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RC Electronics

USA . 98,569 parts In-Stock

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$0.350

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$0.320

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Metaverse IC Inc.

Canada . 53,901 parts In-Stock

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Eastek

USA . 27,500 parts In-Stock

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Lixinc

USA . 12,656 parts In-Stock

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Kulean Microsystems

USA . 8,122 parts In-Stock

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Continental Prestige Electronics

USA . 7,343 parts In-Stock

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$0.415

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$0.281

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$0.247

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$0.247

QUARKTWIN TECHNOLOGY LTD

USA . 7,082 parts In-Stock

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Robosynatics

Brazil . 5,618 parts In-Stock

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$0.921

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$0.902

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$0.902

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$0.902

Lucentia Tech

USA . 5,618 parts In-Stock

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$0.921

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$0.902

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$0.902

SupplyDigital Components

Austria . 4,776 parts In-Stock

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Assy Fe

Spain . 2,865 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,737 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,657 parts In-Stock

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Futuretech Components

Singapore . 2,500 parts In-Stock

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iodParts Technologies Inc.

India . 2,462 parts In-Stock

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TANS Electronics

Latvia . 1,767 parts In-Stock

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Authorized Procurement Solutions

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Allen Electronics Distributors

USA . 1,410 parts In-Stock

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$0.290

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$0.226

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Problanco Electronics

Mexico . 1,002 parts In-Stock

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FE SAS

France . 1,000 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 202 parts In-Stock

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ChipstoGo Electronic ltd

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Overview

Elevate your power control solutions with the MC1413BDR2G by Onsemi, a top-of-the-line Power Bipolar Junction Transistor. Onsemi's reputation for excellence ensures unmatched quality and reliability, making this NPN transistor the ideal choice for switching applications. With its compact design and high DC current gain, this complex configuration transistor offers customers exceptional performance and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your power management needs seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This makes the transistor lightweight and durable, ideal for applications where weight and portability are important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of electronic applications.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, ensuring efficient performance in tasks where rapid switching is required.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving assembly time and space.

Minimum DC Current Gain (hFE): 1000

A high minimum current gain ensures reliable amplification and signal processing, making this transistor suitable for precise and sensitive electronic tasks.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor is capable of handling applications that require higher voltage levels, providing versatility in usage.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current allows for the transistor to handle larger electrical loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1413BDR2G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1413BDR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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