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MC1416P

Onsemi

MC1416P by Onsemi

MC1416P by Onsemi is a NPN BJT transistor with 1000 min hFE, 50V VCE, and 0.5A IC. It is used for switching applications in various electronic circuits due to its complex configuration and through-hole terminal form.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

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TEDSS.com

USA . 18 parts In-Stock

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$0.400

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Component Electronics Inc.

Canada . 182 parts In-Stock

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$1.150

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$0.870

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$0.750

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American Microsemiconductor Inc.

USA . 20 parts In-Stock

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$12.590

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Digiode

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Vyrian

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Bristol Electronics

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Sinequanon

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Q Components

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J2 Sourcing AB

Sweden . 225 parts In-Stock

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Mentor Electronics Marketing, LLC

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ComSIT Distribution GmbH

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ECAB

Sweden . 124 parts In-Stock

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Electronic Expediters

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Semi Source

USA . 80 parts In-Stock

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DF Sales Co.

USA . 70 parts In-Stock

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DF Sales Co.

USA . 70 parts In-Stock

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70

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Speed Components Ltd

Israel . 49 parts In-Stock

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EMSNET

USA . 31 parts In-Stock

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PAR Electronics

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Nova Conductors

Japan . 10 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 4 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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North Shore Components

USA . 1 parts In-Stock

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GES GmbH

Germany . 1 parts In-Stock

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Huijzer Components

Netherlands . 1 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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$0.400

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120

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Ampacity Inc.

Singapore . 1,574 parts In-Stock

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$29.050

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SupplyDigital Components

Austria . 7,265 parts In-Stock

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TANS Electronics

Latvia . 6,711 parts In-Stock

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Kulean Microsystems

USA . 3,884 parts In-Stock

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Argo Parts USA

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Problanco Electronics

Mexico . 2,149 parts In-Stock

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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Continental Prestige Electronics

USA . 680 parts In-Stock

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Kepictronics

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Corphita

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Aranea Global

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Assy Fe

Spain . 72 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 16 parts In-Stock

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Perfect Parts

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Overview

Enhance your power management with the Onsemi MC1416P, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its advanced configuration and NPN polarity, this transistor offers unparalleled performance and reliability. Whether you're looking to optimize your energy efficiency or enhance your circuit design, the MC1416P provides the perfect solution. Trust in the expertise of Onsemi to deliver top-of-the-line components that meet your needs and exceed your expectations. Unlock the potential of your projects with the MC1416P from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in low-power amplification and switching applications, making this product versatile for different circuit designs.

Configuration: COMPLEX

Complex configuration allows for more precise control and versatility in various circuit applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape is easy to handle and mount on circuit boards, simplifying the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, making it easier to solder onto PCBs.

No. of Elements: 7

Multiple elements allow for more complex circuit configurations and functionality.

No. of Terminals: 16

Having more terminals provides flexibility in connecting the transistor to different parts of the circuit.

Package Style (Meter): IN-LINE

Inline package style is commonly used and easy to integrate into various circuit designs.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures stable and reliable amplification, making it suitable for precision applications.

Maximum Collector-Emitter Voltage: 50 V

High maximum voltage rating allows for use in a wide range of applications without risking damage.

Transistor Element Material: SILICON

Silicon material offers high performance and low leakage, ensuring efficient operation of the transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum current rating of 0.5A, this transistor can handle moderate power levels in various circuits.

Terminal Finish: TIN LEAD

Tin-lead finish provides good conductivity and solderability, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds, ensuring reliable solder joints during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance of 235°C makes it suitable for reflow soldering processes without compromising performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1416P attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1416P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-01-144-4527, 5962011444527

NIIN

011444527

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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