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MC1413P

Onsemi

MC1413P by Onsemi

MC1413P by Onsemi is a NPN BJT transistor with hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, it operates b/w -20 to 85°C. Its PLASTIC/EPOXY package has 16 terminals in RECTANGULAR shape suitable for IN-LINE mounting.

Median Price

$0.598

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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DF Sales Co.

USA . 41 parts In-Stock

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TEDSS.com

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Voyager Components

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Component Electronics Inc.

Canada . 70 parts In-Stock

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Freelance Electronics

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Forefront Electronics and Design

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American Microsemiconductor Inc.

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Mentor Electronics Marketing, LLC

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Corohmni

South Africa . 341 parts In-Stock

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Ampacity Inc.

Singapore . 1,555 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Microchip USA

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Authorized Procurement Solutions

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TANS Electronics

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Perfect Parts

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Continental Prestige Electronics

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Aranea Global

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SupplyDigital Components

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Glotronic Ltd.

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Montclair Electronics, Inc.

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Overview

Power up your projects with the MC1413P by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With its NPN polarity and complex configuration, this transistor offers superior performance and reliability. Its 1000 minimum DC current gain ensures optimal efficiency, while the maximum collector-emitter voltage of 50V provides ample power handling capabilities. Ideal for a wide range of electronic applications, the MC1413P is the perfect choice for customers looking for a high-performance transistor that delivers exceptional value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer good amplification capabilities.

Configuration: COMPLEX

Complex configuration allows for versatile use in a variety of circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable for such tasks.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and compact design layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are easy to solder onto circuit boards.

No. of Elements: 7

Multiple elements allow for higher current handling and increased functionality in complex circuits.

No. of Terminals: 16

More terminals provide greater connection options and flexibility in circuit design.

Package Style (Meter): IN-LINE

In-line package style allows for easy integration into existing circuits and system layouts.

Minimum DC Current Gain (hFE): 1000

High minimum DC current gain ensures reliable and consistent transistor performance.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for use in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability in semiconductor devices.

Minimum Operating Temperature: -20 °C

Low minimum operating temperature rating ensures functionality in colder environments.

Maximum Collector Current (IC): 0.5 A

Good maximum collector current rating allows for handling of moderate power levels in switching applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and ensures strong connections with other components.

Terminal Position: DUAL

Dual terminal position allows for easy and secure mounting on circuit boards.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures component reliability during soldering process.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable and durable solder joints during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1413P attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1413P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-087-6729, 5962010876729, 5962-99-658-9187, 5962996589187

NIIN

010876729, 996589187

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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