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MC1416BD

Onsemi

MC1416BD by Onsemi

MC1416BD by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 1000, VCE of 50V, and IC of 0.5A. The GULL WING package with 16 terminals is ideal for surface mount configurations in various electronic devices.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Vyrian

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Prism Electronics

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Connector Distribution Corp

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Right Parts Inc.

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Sea View Technologies

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LittleDiode

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Kulean Microsystems

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TANS Electronics

Latvia . 4,238 parts In-Stock

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Infinite Electronics LLP (Excess)

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Problanco Electronics

Mexico . 2,922 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 628 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Power up your projects with the MC1416BD by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its NPN polarity and complex configuration, this transistor offers unparalleled performance and reliability. Whether you're working on industrial automation, automotive systems, or consumer electronics, this product's small outline package and gull wing terminals make it easy to integrate into your designs. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds your expectations. Experience the value and benefits that the MC1416BD brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

Common and versatile type of transistor for various electronic applications.

Configuration: COMPLEX

Allows for more advanced circuit designs and functionalities.

Transistor Application: SWITCHING

Designed specifically for efficient switching operations, making it suitable for power control applications.

Surface Mount: YES

Easily mountable on PCBs, saving space and enabling automated assembly.

Package Shape: RECTANGULAR

Standard shape for easy integration into existing designs.

Terminal Form: GULL WING

Provides strong mechanical connection and easy soldering onto PCBs.

Minimum DC Current Gain (hFE): 1000

High current gain ensures optimal performance in amplification and switching circuits.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Highly reliable and widely used material for transistors.

Maximum Collector Current (IC): 0.5 A

Sufficient current handling capability for many electronic applications.

Terminal Finish: TIN LEAD

Provides good solderability and corrosion resistance.

Terminal Position: DUAL

Allows for easier PCB layout and connectivity.

Peak Reflow Temperature °C: 235

Can withstand high temperature soldering processes, ensuring reliable solder joints.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1416BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1416BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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