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MC1413BPG

Onsemi

MC1413BPG by Onsemi

MC1413BPG by Onsemi is a NPN BJT transistor with 16 terminals. It has a hFE of 1000, IC of 0.5A, and VCE of 50V. Primarily used for switching applications due to its complex configuration and max operating temperature of 150°C.

Median Price

$0.227

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

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Nova Conductors

Japan . 95 parts In-Stock

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$0.227

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95

$0.227

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Chip Stock

USA . 3,486 parts In-Stock

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3,486

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Digiode

USA . 2,324 parts In-Stock

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Vyrian

USA . 2,263 parts In-Stock

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2,263

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ComSIT Distribution GmbH

Germany . 75 parts In-Stock

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ComSIT USA

USA . 75 parts In-Stock

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75

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Distributors (Availability)

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Corohmni

South Africa . 312 parts In-Stock

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$0.222

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312

$0.222

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Continental Prestige Electronics

USA . 6,754 parts In-Stock

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$0.227

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$0.222

6,754

$0.227

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$0.222

Argo Parts USA

USA . 2,003 parts In-Stock

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$0.227

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$0.220

2,003

$0.227

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$0.220

Aztec Data Supply Inc.

USA . 196 parts In-Stock

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$1.336

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196

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AZTECH Wire

Italy . 240 parts In-Stock

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$12.578

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240

$12.578

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Semicontronic

India . 1 parts In-Stock

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$49.050

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$47.824

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$47.578

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1

$49.050

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Ampacity Inc.

Singapore . 1 parts In-Stock

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$55.050

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Component Stockers USA

USA . 435 parts In-Stock

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$99.990

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435

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TANS Electronics

Latvia . 7,998 parts In-Stock

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SupplyDigital Components

Austria . 7,948 parts In-Stock

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Perfect Parts

USA . 4,986 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Problanco Electronics

Mexico . 2,491 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,238 parts In-Stock

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Kepictronics

USA . 2,125 parts In-Stock

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Corphita

USA . 988 parts In-Stock

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Kulean Microsystems

USA . 534 parts In-Stock

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534

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UHIMA Technologies

Türkiye . 528 parts In-Stock

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528

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Overview

Discover the power of the MC1413BPG by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its advanced technology and reliable performance, this NPN transistor offers unmatched efficiency and durability. Whether you're in the automotive, industrial, or consumer electronics industry, this versatile component delivers exceptional value and benefits to optimize your designs. Trust Onsemi's expertise and innovation to take your projects to the next level with the MC1413BPG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely applicable.

Configuration: COMPLEX

The complex configuration allows for greater control and customization in circuit design, making this transistor suitable for a variety of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape enables easy integration into circuit boards and compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Elements: 7

The multiple elements allow for more complex circuit configurations and functionality.

No. of Terminals: 16

With a higher number of terminals, this transistor offers more connectivity options and versatility in circuit design.

Package Style (Meter): IN-LINE

The in-line package style ensures easy installation and compatibility with standard mounting techniques.

Minimum DC Current Gain (hFE): 1000

A high minimum DC current gain indicates efficient amplification capabilities and better performance in amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for safe operation in high voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, stability, and reliability, making this product a durable and efficient choice.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor is suitable for medium-power applications.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for various mounting orientations.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering processes during assembly, ensuring a strong and durable connection.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1413BPG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1413BPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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