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MC1413D

Onsemi

MC1413D by Onsemi

MC1413D by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 1000, VCE of 50V, and IC of 0.5A. With Gull Wing terminals and small outline package, it operates b/w -20°C to 85°C efficiently in various electronic circuits.

Median Price

$0.383

Lifecycle Status

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48

In-Stock Inventory

1k+

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South Africa . 228 parts In-Stock

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Ampacity Inc.

Singapore . 19,420 parts In-Stock

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Overview

Upgrade your power system with the MC1413D by Onsemi, a top-quality Power BJT transistor that offers unparalleled performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust that this NPN transistor will exceed your expectations. Ideal for switching applications, this versatile component is designed to handle complex configurations with ease. Say goodbye to power limitations and hello to efficiency with the MC1413D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, offering versatility

Configuration: COMPLEX

The complex configuration allows for more sophisticated circuit designs and performance capabilities

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable operation

Surface Mount: YES

Enables easy and compact integration into electronic circuits, saving space and simplifying assembly

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy mounting and compatibility with existing designs

Terminal Form: GULL WING

Gull wing terminals facilitate secure soldering and reliable connections during surface mount installation

No. of Elements: 7

Multiple elements provide enhanced functionality and performance in complex circuit designs

No. of Terminals: 16

Higher number of terminals allow for more connection options and flexibility in circuit layout

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and is suitable for modern electronic devices

Minimum DC Current Gain (hFE): 1000

High minimum DC current gain ensures stable and consistent amplification performance

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environments and conditions

Maximum Collector-Emitter Voltage: 50 V

High maximum voltage rating provides durability and protection against voltage spikes

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic applications

Minimum Operating Temperature: -20 °C

Lowest operating temperature allows for use in cold environments without sacrificing performance

Maximum Collector Current (IC): 0.5 A

Maximum collector current rating ensures safe and efficient operation in various circuit applications

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and corrosion resistance for long-term reliability

Terminal Position: DUAL

Dual terminal positioning allows for versatile mounting options and easy integration into circuits

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and reliability during surface mount assembly

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1413D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1413D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-433-4481, 5962014334481

NIIN

014334481

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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