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MC1413BDR2

Onsemi

MC1413BDR2 by Onsemi

MC1413BDR2 by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 1000, VCE of 50V, and IC of 0.5A. The GULL WING package with 16 terminals is surface mountable, making it suitable for compact designs in various electronic circuits.

Median Price

$0.396

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 633 parts In-Stock

1+ parts

-

100+ parts

$0.396

1k+ parts

$0.329

10k+ parts

$0.293

633

-

$0.396

$0.329

$0.293

Distributors (In-Stock)

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Freelance Electronics

USA . 600 parts In-Stock

1+ parts

$0.261

100+ parts

$0.275

1k+ parts

$0.259

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-

600

$0.261

$0.275

$0.259

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Digiode

USA . 2,377 parts In-Stock

1+ parts

$0.309

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-

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2,377

$0.309

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Component Electronics Inc.

Canada . 50 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

10k+ parts

-

50

$1.150

$0.870

$0.750

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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R&J Components

USA . 8,056 parts In-Stock

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8,056

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Vyrian

USA . 3,643 parts In-Stock

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3,643

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Bristol Electronics

USA . 1,981 parts In-Stock

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1,981

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Semi Source

USA . 1,887 parts In-Stock

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1,887

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Sensible Micro Corp

USA . 1,774 parts In-Stock

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1,774

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Electronics Depot

USA . 1,354 parts In-Stock

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1,354

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J2 Sourcing AB

Sweden . 1,320 parts In-Stock

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1,320

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ECAB

Sweden . 489 parts In-Stock

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489

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Inland Empire Components Inc.

USA . 402 parts In-Stock

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402

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Quantum Digital Technology

USA . 50 parts In-Stock

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50

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LWI Electronics Inc

India . 40 parts In-Stock

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40

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Prism Electronics

USA . 14 parts In-Stock

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14

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 135 parts In-Stock

1+ parts

$0.205

100+ parts

-

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135

$0.205

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Ampacity Inc.

Singapore . 520 parts In-Stock

1+ parts

$0.276

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520

$0.276

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Corphita

USA . 2,455 parts In-Stock

1+ parts

$0.292

100+ parts

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2,455

$0.292

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Component Stockers USA

USA . 1,969 parts In-Stock

1+ parts

$0.330

100+ parts

$0.220

1k+ parts

$0.200

10k+ parts

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1,969

$0.330

$0.220

$0.200

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Benley Electronics

USA . 1 parts In-Stock

1+ parts

$2.000

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1

$2.000

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AZTECH Wire

Italy . 411 parts In-Stock

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$9.425

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411

$9.425

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RC Electronics

USA . 50,000 parts In-Stock

1+ parts

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100+ parts

$0.460

1k+ parts

$0.440

10k+ parts

$0.430

50,000

-

$0.460

$0.440

$0.430

QUARKTWIN TECHNOLOGY LTD

USA . 17,432 parts In-Stock

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Component Connect

USA . 8,720 parts In-Stock

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TANS Electronics

Latvia . 5,422 parts In-Stock

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Kulean Microsystems

USA . 5,334 parts In-Stock

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5,334

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SupplyDigital Components

Austria . 4,792 parts In-Stock

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4,792

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Continental Prestige Electronics

USA . 4,294 parts In-Stock

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Argo Parts USA

USA . 4,045 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Problanco Electronics

Mexico . 1,300 parts In-Stock

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1,300

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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625

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Kepictronics

USA . 562 parts In-Stock

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562

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Bastille Electronics

Australia . 65 parts In-Stock

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65

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Perfect Parts

USA . 20 parts In-Stock

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20

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Overview

Elevate your power management solutions with the MC1413BDR2 by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor guarantees top-notch quality and reliability. Ideal for switching applications, this NPN transistor offers unparalleled performance in a compact package. With a high DC current gain of 1000 and a maximum collector-emitter voltage of 50 V, this product delivers exceptional efficiency and durability. Trust Onsemi to provide you with the cutting-edge technology you need for seamless operation and optimal functionality. Elevate your power management solutions with the MC1413BDR2 by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor guarantees top-notch quality and reliability. Ideal for switching applications, this NPN transistor offers unparalleled performance in a compact package. With a high DC current gain of 1000 and a maximum collector-emitter voltage of 50 V, this product delivers exceptional efficiency and durability. Trust Onsemi to provide you with the cutting-edge technology you need for seamless operation and optimal functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides a cost-effective and lightweight solution for the product.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for amplification and switching applications due to their high current and voltage capabilities.

Configuration: COMPLEX

The complex configuration indicates that this transistor can handle multiple functions efficiently, making it versatile for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

Surface mount technology makes the product easier to assemble, reduces space requirements, and improves thermal performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for easier PCB layout and integration, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals simplify the soldering process, providing a secure and reliable connection on the PCB.

Minimum DC Current Gain (hFE): 1000

High minimum DC current gain ensures consistent and stable amplification performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

The 50V maximum collector-emitter voltage rating indicates the transistor's ability to handle moderate voltage levels safely.

Transistor Element Material: SILICON

Silicon-based transistors offer superior performance, reliability, and efficiency compared to other materials.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor is suitable for low to moderate power switching applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and conductivity, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and provides options for different mounting configurations.

Peak Reflow Temperature °C: 235

High peak reflow temperature indicates the product's capability to withstand reflow soldering processes without damage.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1413BDR2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1413BDR2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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