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MC1413PG

Onsemi

MC1413PG by Onsemi

MC1413PG by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 1000.

Median Price

$2.052

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$2.052

100+ parts

$1.867

1k+ parts

$1.683

10k+ parts

-

3,000

$2.052

$1.867

$1.683

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.670

100+ parts

-

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10

$0.670

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Component Electronics Inc.

Canada . 29 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

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29

$1.540

$1.150

$1.000

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Digiode

USA . 2,297 parts In-Stock

1+ parts

$1.949

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2,297

$1.949

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Chip Stock

USA . 9,500 parts In-Stock

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9,500

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Vyrian

USA . 7,666 parts In-Stock

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7,666

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Bristol Electronics

USA . 397 parts In-Stock

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397

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Carlin Systems, Inc.

USA . 175 parts In-Stock

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175

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LittleDiode

UK . 146 parts In-Stock

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146

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Prism Electronics

USA . 65 parts In-Stock

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65

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Inventory MP

USA . 42 parts In-Stock

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42

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Florida Circuit

USA . 15 parts In-Stock

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15

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Cyclops Electronics Ltd

UK . 10 parts In-Stock

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10

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Velocity Electronics

USA . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 403 parts In-Stock

1+ parts

$0.657

100+ parts

-

1k+ parts

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403

$0.657

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.670

100+ parts

$0.636

1k+ parts

$0.605

10k+ parts

$0.596

300

$0.670

$0.636

$0.605

$0.596

Continental Prestige Electronics

USA . 4,961 parts In-Stock

1+ parts

$0.670

100+ parts

-

1k+ parts

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$0.657

4,961

$0.670

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-

$0.657

Argo Parts USA

USA . 2,119 parts In-Stock

1+ parts

$0.670

100+ parts

-

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$0.650

2,119

$0.670

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-

$0.650

Semicontronic

India . 2,833 parts In-Stock

1+ parts

$1.740

100+ parts

$1.696

1k+ parts

$1.688

10k+ parts

-

2,833

$1.740

$1.696

$1.688

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Corphita

USA . 2,459 parts In-Stock

1+ parts

$1.847

100+ parts

-

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2,459

$1.847

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.052

100+ parts

$1.867

1k+ parts

$1.683

10k+ parts

-

3,000

$2.052

$1.867

$1.683

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Ampacity Inc.

Singapore . 2,617 parts In-Stock

1+ parts

$3.800

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2,617

$3.800

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AZTECH Wire

Italy . 1,053 parts In-Stock

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$18.170

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1,053

$18.170

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Component Stockers USA

USA . 660 parts In-Stock

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$99.990

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660

$99.990

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Kepictronics

USA . 60,900 parts In-Stock

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Perfect Parts

USA . 25,362 parts In-Stock

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TANS Electronics

Latvia . 7,673 parts In-Stock

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7,673

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Kulean Microsystems

USA . 4,790 parts In-Stock

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4,790

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Problanco Electronics

Mexico . 4,244 parts In-Stock

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4,244

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SupplyDigital Components

Austria . 391 parts In-Stock

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391

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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283

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Overview

Discover the power of the MC1413PG by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) that brings numerous advantages to your applications. With its NPN polarity and switching capabilities, this transistor is perfect for complex configurations. The MC1413PG offers incredible value with its impressive minimum DC current gain (hFE) of 1000 and maximum collector-emitter voltage of 50V. Its durable plastic/epoxy package body material and through-hole terminal form ensure reliability in any setting. Trust Onsemi's expertise and elevate your projects with the MC1413PG!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with a plastic/epoxy package body material, which provides durability and protection for the internal components, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type of this power BJT allows for easy integration into NPN transistor circuit designs, offering compatibility and versatility.

Configuration: COMPLEX

With a complex configuration, this power BJT can handle a wide range of switching applications, making it suitable for complex electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product offers fast switching speeds and excellent performance, making it ideal for use in electronic devices that require reliable and efficient switching capabilities.

Package Shape: RECTANGULAR

The rectangular package shape of this power BJT enables a compact and space-saving design, allowing for easy installation and integration in limited spaces.

Terminal Form: THROUGH-HOLE

Featuring a through-hole terminal form, this power BJT offers secure and reliable connections to the circuit board, ensuring stable performance and ease of assembly.

No. of Elements: 7

With 7 elements, this power BJT provides multiple components in a single package, simplifying the circuit design and reducing the overall component count, saving both space and cost.

No. of Terminals: 16

The 16 terminals of this power BJT offer a wide range of connection options, providing flexibility and versatility for circuit designs that require multiple connections.

Package Style (Meter): IN-LINE

The in-line package style of this power BJT allows for easy mounting on circuit boards, simplifying assembly and enabling efficient manufacturing processes.

Minimum DC Current Gain (hFE): 1000

With a minimum DC current gain of 1000, this power BJT ensures reliable amplification of input signals, providing high gain and accurate signal reproduction.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this power BJT can withstand high-temperature environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

This power BJT has a maximum collector-emitter voltage of 50 volts, allowing it to handle higher voltage levels, ensuring stable operation and protection against voltage spikes.

Transistor Element Material: SILICON

Made with silicon transistor element material, this power BJT offers excellent thermal conductivity and durability, ensuring stable performance even in demanding conditions.

Minimum Operating Temperature: -20 °C

With a minimum operating temperature of -20°C, this power BJT can withstand low-temperature environments, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

This power BJT can handle a maximum collector current of 0.5 amps, making it capable of handling high-power applications and providing reliable current amplification.

Terminal Finish: Tin (Sn)

The tin terminal finish of this power BJT provides corrosion resistance and enhances solderability, ensuring secure and reliable connections for long-lasting performance.

Terminal Position: DUAL

Featuring a dual terminal position, this power BJT offers flexibility in circuit board layout, allowing for easy integration and accommodating various design requirements.

Maximum Time At Peak Reflow Temperature (s): 40

With a maximum time of 40 seconds at peak reflow temperature, this power BJT ensures proper soldering during manufacturing processes, contributing to reliable and consistent performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this power BJT can withstand high-temperature soldering processes, ensuring secure and durable connections during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MC1413PG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MC1413PG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-589-8002, 5962015898002

NIIN

015898002

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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