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TIP122TU

Onsemi

TIP122TU by Onsemi

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.

Median Price

$1.458

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 76 parts In-Stock

1+ parts

$0.341

100+ parts

$0.321

1k+ parts

$0.290

10k+ parts

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76

$0.341

$0.321

$0.290

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Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$2.575

100+ parts

$2.446

1k+ parts

$2.446

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100

$2.575

$2.446

$2.446

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.284

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150

$0.284

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Digiode

USA . 1,218 parts In-Stock

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$0.324

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1,218

$0.324

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Chip Stock

USA . 33,630 parts In-Stock

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33,630

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Martec Srl

Italy . 21,963 parts In-Stock

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21,963

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Vyrian

USA . 6,648 parts In-Stock

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6,648

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Bristol Electronics

USA . 1,719 parts In-Stock

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1,719

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EPE Components Inc.

USA . 1,702 parts In-Stock

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1,702

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PUI

USA . 200 parts In-Stock

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200

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NexGen Digital

USA . 81 parts In-Stock

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Sogenti Electronics

Canada . 72 parts In-Stock

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Beckwith Electronics

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Atlantic Semiconductor

USA . 17 parts In-Stock

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Electronics Depot

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 119 parts In-Stock

1+ parts

$0.278

100+ parts

-

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119

$0.278

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Continental Prestige Electronics

USA . 4,254 parts In-Stock

1+ parts

$0.284

100+ parts

-

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$0.278

4,254

$0.284

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-

$0.278

Argo Parts USA

USA . 1,753 parts In-Stock

1+ parts

$0.284

100+ parts

-

1k+ parts

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$0.275

1,753

$0.284

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-

$0.275

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.284

100+ parts

-

1k+ parts

$0.270

10k+ parts

$0.264

1,000

$0.284

-

$0.270

$0.264

Ampacity Inc.

Singapore . 88 parts In-Stock

1+ parts

$0.290

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88

$0.290

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Semicontronic

India . 39 parts In-Stock

1+ parts

$0.290

100+ parts

$0.283

1k+ parts

$0.281

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39

$0.290

$0.283

$0.281

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Corphita

USA . 1,643 parts In-Stock

1+ parts

$0.307

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1,643

$0.307

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Modulus Dynamics

Lithuania . 1,000 parts In-Stock

1+ parts

$0.315

100+ parts

$0.312

1k+ parts

$0.303

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1,000

$0.315

$0.312

$0.303

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Component Stockers USA

USA . 92 parts In-Stock

1+ parts

$0.330

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92

$0.330

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.575

100+ parts

$2.446

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$2.446

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100

$2.575

$2.446

$2.446

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AZTECH Wire

Italy . 256 parts In-Stock

1+ parts

$15.020

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256

$15.020

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RC Electronics

USA . 57,081 parts In-Stock

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$0.290

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$0.260

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$0.260

57,081

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$0.260

Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,837 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,034 parts In-Stock

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Kulean Microsystems

USA . 6,812 parts In-Stock

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Perfect Parts

USA . 5,523 parts In-Stock

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SupplyDigital Components

Austria . 4,664 parts In-Stock

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4,664

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Problanco Electronics

Mexico . 4,337 parts In-Stock

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Infinite Electronics LLP (Excess)

. 3,963 parts In-Stock

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3,963

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TANS Electronics

Latvia . 2,866 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Supply Digital

USA . 1,084 parts In-Stock

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1,084

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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357

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Robosynatics

Brazil . 10 parts In-Stock

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$0.655

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$0.655

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$0.655

10

-

$0.655

$0.655

$0.655

Lucentia Tech

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$0.655

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$0.655

10k+ parts

$0.655

10

-

$0.655

$0.655

$0.655

Overview

Elevate your power switching capabilities with the TIP122TU by Onsemi, a top-tier manufacturer known for producing premium Power Bipolar Junction Transistors. This NPN transistor in a darlington configuration offers built-in diode and resistor, making it perfect for various switching applications. With a maximum collector-emitter voltage of 100 V and a minimum DC current gain of 1000, this transistor ensures high performance and reliability. Upgrade your projects with the TIP122TU and experience superior quality, efficiency, and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environments and conditions.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications due to their easy integration and compatibility with many circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration along with built-in diode and resistor simplifies circuit design and can improve overall performance and efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle high currents and voltages efficiently.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating or getting damaged.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and secure installation in various electronic systems.

Minimum DC Current Gain (hFE): 1000

The high minimum DC current gain ensures stable and consistent performance in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its functionality.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating enables the transistor to handle high voltage applications safely and efficiently.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, this transistor is ideal for applications that require high power switching.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring reliable connections in electronic circuits.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures correct alignment during installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP122TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TIP122TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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