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2SC5200-O

Toshiba

2SC5200-O by Toshiba

Toshiba's 2SC5200-O is a NPN BJT transistor with max VCEsat of 3V, hFE of 80, and IC of 15A. Ideal for amplifier applications due to its max power dissipation of 150W and collector-emitter voltage of 230V. Suitable for high-power audio amplifiers or industrial equipment requiring robust performance in a rectangular package style.

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.639

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$0.607

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Aztec Data Supply Inc.

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Overview

Unlock the power of high-quality audio amplification with the 2SC5200-O by Toshiba. Manufactured by a trusted industry leader, this NPN Power Bipolar Junction Transistor is designed for exceptional performance in amplifier applications. With a maximum VCEsat of 3V and a maximum power dissipation of 150W, this transistor delivers reliable and efficient operation. Whether you're a DIY enthusiast or a professional in need of top-notch components, the 2SC5200-O offers unmatched value, benefits, and advantages to elevate your audio projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This package material offers good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used and easily compatible with many circuit designs, making this product versatile.

Configuration: SINGLE

The single configuration simplifies the design and application of the transistor in circuits, making it easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in audio or signal amplification.

Maximum VCEsat: 3 V

Low VCEsat reduces power consumption and heat generation in the circuit, improving overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuit boards, saving space and facilitating assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections, making installation and soldering of the transistor easier and more reliable.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy and secure mounting on various surfaces, providing stability and heat dissipation.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures efficient amplification of signals with minimal input power, improving overall performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in demanding environments without performance degradation.

Maximum Collector-Emitter Voltage: 230 V

High collector-emitter voltage rating provides safety margin for voltage spikes or fluctuations in the circuit, ensuring reliability.

Transistor Element Material: SILICON

Silicon material offers high thermal stability and performance, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle high currents without damage, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and wiring, reducing the chances of errors during installation.

Case Connection: COLLECTOR

Collector connection ensures easy circuit design and layout, facilitating efficient current flow and voltage control.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows the transistor to switch rapidly between on and off states, providing fast signal amplification and response.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5200-O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2SC5200-O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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