Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Toshiba's 2SC5200-O is a NPN BJT transistor with max VCEsat of 3V, hFE of 80, and IC of 15A. Ideal for amplifier applications due to its max power dissipation of 150W and collector-emitter voltage of 230V. Suitable for high-power audio amplifiers or industrial equipment requiring robust performance in a rectangular package style.
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Assy Fe
This package material offers good insulation and protection for the transistor, making it durable and reliable.
NPN transistors are commonly used and easily compatible with many circuit designs, making this product versatile.
The single configuration simplifies the design and application of the transistor in circuits, making it easy to use.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in audio or signal amplification.
Low VCEsat reduces power consumption and heat generation in the circuit, improving overall efficiency.
Rectangular shape allows for easy mounting and placement in circuit boards, saving space and facilitating assembly.
Through-hole terminals provide secure connections, making installation and soldering of the transistor easier and more reliable.
High power dissipation capability allows the transistor to handle large amounts of power without overheating, ensuring long-term reliability.
Flange mount package style offers easy and secure mounting on various surfaces, providing stability and heat dissipation.
High DC current gain ensures efficient amplification of signals with minimal input power, improving overall performance.
High maximum operating temperature allows the transistor to operate in demanding environments without performance degradation.
High collector-emitter voltage rating provides safety margin for voltage spikes or fluctuations in the circuit, ensuring reliability.
Silicon material offers high thermal stability and performance, making the transistor suitable for a wide range of applications.
High collector current rating allows the transistor to handle high currents without damage, making it suitable for power applications.
Single terminal position simplifies circuit connections and wiring, reducing the chances of errors during installation.
Collector connection ensures easy circuit design and layout, facilitating efficient current flow and voltage control.
High transition frequency allows the transistor to switch rapidly between on and off states, providing fast signal amplification and response.
Power Bipolar Junction Transistors (BJT) 2SC5200-O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba
Case Connection:
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2SC5200-O Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
SS14
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99-7-F
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
Surge Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LP2950CDT-3.3G
Onsemi
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
BAV99
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
SS495A-SP
Honeywell Sensing And Control
SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.
SMBJ18CA
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
Leshan Radio
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
Forward International Electronics
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;
Sensitron Semiconductor
MJE15035G
MJE15035G by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150°C with a min DC current gain of 10 (hFE).
D44H11
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
NJVMJD44H11G
NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).
MJE340
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30;
TIP36C
Taitron Components
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSFM-T3;
BDX53C
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP111
TIP111 by Texas Instruments is a NPN Darlington BJT with max power dissipation of 50W. It has min hFE of 500 and max VCE of 80V, ideal for high-power applications in flange mount packages. Suitable for switching and amplification tasks due to its silicon transistor element material and single terminal position.
MJD340T4
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .5 A; Terminal Position: SINGLE;
Nte Electronics
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
TIP125
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;
2SC5200
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;
MJL21194G
The Onsemi MJL21194G is a NPN power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power amplification needs.
2N3055
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP41C
Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BUV48A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
TIP42C
Central Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
ULN2003APW
ULN2003APW by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in small outline package is made of silicon with nickel/palladium/gold terminal finish.
TIP120
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
MJD122T4
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): 30;
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Unisonic Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;
2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.
Inchange Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 230 V;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; No. of Elements: 1;
2SC5200OTU
2SC5200OTU by Onsemi is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 17A, and max. power dissipation of 150W. Ideal for amplifier applications due to its single configuration and silicon transistor element material.
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 17 A;
2SC5200N(S1,E,S)
2SC5200-O(S1,F
Power Bipolar Transistors;
2SC5200O
2SC5200RTU
The Onsemi 2SC5200RTU is a NPN power BJT with max. collector-emitter voltage of 250V, ideal for amplifier applications. Featuring a max. power dissipation of 150W and max. collector current of 17A, it operates at up to 150°C. With a min DC current gain of 55 and transition frequency of 30MHz, this transistor offers high performance in a flange mount package for through-hole mounting.
2SC5171
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
2SC5994-TD-E
Sanyo Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 2 A;
2SC5171,Q(J
2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.
2SC5354-1(F)
2SC5569-TD-E
Onsemi's 2SC5569-TD-E is a NPN BJT transistor with max. Vce of 50V and Ic of 7A. With hFE of 200, it operates at fT of 330MHz for switching applications in SMT packages.
2SC5200R
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