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2SC5171,Q(J

Toshiba

2SC5171,Q(J by Toshiba

2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.

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Overview

Unlock the power of innovation with the 2SC5171,Q(J by Toshiba. Manufactured with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this NPN transistor delivers exceptional performance and efficiency. With a maximum collector-emitter voltage of 180V and a transition frequency of 200MHz, it is designed to meet the demands of modern electronics. Trust Toshiba for cutting-edge technology and elevate your projects to new heights with the 2SC5171,Q(J.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and cost-effective, making it ideal for various amplifier applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows this product to work effectively in amplifying signals and controlling circuits in electronic devices.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making this transistor convenient for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers reliable performance and efficient signal amplification.

Package Shape: RECTANGULAR

The rectangular shape of the package provides easy mounting and space-saving benefits, making it suitable for compact amplifier designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and easy soldering, enhancing the reliability and longevity of the transistor.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options, allowing for flexible integration into amplifier circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and heat dissipation benefits, making it suitable for high-power amplifier applications.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor ensures consistent and reliable amplification of signals in various electronic devices.

Maximum Collector-Emitter Voltage: 180 V

The high maximum collector-emitter voltage of 180 V allows this transistor to handle larger voltage levels, making it suitable for robust amplifier circuits.

Transistor Element Material: SILICON

Made with silicon, this transistor offers high performance and durability, ensuring stable operation in amplifier applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle higher current levels, making it suitable for powering amplifier circuits.

Terminal Position: SINGLE

The single terminal position simplifies the installation process, ensuring easy connectivity and efficient operation in amplifier applications.

Case Connection: ISOLATED

The isolated case connection enhances the safety and reliability of the transistor, making it a secure choice for amplifier circuits.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200 MHz, this transistor provides fast and efficient signal amplification, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5171,Q(J attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5171,Q(J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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