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2SC5171

Toshiba

2SC5171 by Toshiba

The Toshiba 2SC5171 is a NPN BJT transistor with max VCEsat of 1V, hFE of 50, and max IC of 2A. Ideal for amplifier applications, it has a max power dissipation of 20W and operates up to 150°C. With a fT of 200MHz, this transistor is housed in a plastic/epoxy package with flange mount style.

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Overview

Elevate your electronics projects to the next level with the Toshiba 2SC5171 Power Bipolar Junction Transistor. Manufactured by industry leader Toshiba, this NPN transistor is perfect for amplifier applications, offering a high-quality and reliable performance. With a maximum collector-emitter voltage of 180V and a maximum power dissipation of 20W, this transistor delivers exceptional value and benefits to customers looking for a dependable component for their projects. Upgrade your designs with the Toshiba 2SC5171 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the transistor and ensures durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Maximum VCEsat: 1 V

Low VCEsat means lower power dissipation and higher efficiency in amplifier circuits.

Maximum Power Dissipation (Abs): 2 W

Can handle high power levels without overheating, ensuring reliability in amplifier applications.

Maximum Collector-Emitter Voltage: 180 V

Allows for higher voltage handling capabilities in amplifier circuits.

Maximum Collector Current (IC): 2 A

Can handle high currents, making it suitable for power amplifier applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for higher frequency amplification, making this transistor suitable for audio and RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5171 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

20 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SC5171 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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