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2SC5569-TD-E

Onsemi

2SC5569-TD-E by Onsemi

Onsemi's 2SC5569-TD-E is a NPN BJT transistor with max. Vce of 50V and Ic of 7A. With hFE of 200, it operates at fT of 330MHz for switching applications in SMT packages.

Median Price

$0.395

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,604 parts In-Stock

1+ parts

$0.310

100+ parts

$0.296

1k+ parts

$0.281

10k+ parts

-

1,604

$0.310

$0.296

$0.281

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Farnell

UK . 2,731 parts In-Stock

1+ parts

$0.797

100+ parts

$0.369

1k+ parts

$0.272

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2,731

$0.797

$0.369

$0.272

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Mouser Electronics

USA . 6,206 parts In-Stock

1+ parts

$1.270

100+ parts

$0.535

1k+ parts

$0.348

10k+ parts

-

6,206

$1.270

$0.535

$0.348

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Newark

USA . 2,234 parts In-Stock

1+ parts

$1.310

100+ parts

$0.539

1k+ parts

$0.418

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2,234

$1.310

$0.539

$0.418

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Element14

Singapore . 2,661 parts In-Stock

1+ parts

$1.340

100+ parts

$0.530

1k+ parts

$0.456

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2,661

$1.340

$0.530

$0.456

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Rochester

USA . 10,953 parts In-Stock

1+ parts

-

100+ parts

$0.350

1k+ parts

$0.291

10k+ parts

$0.259

10,953

-

$0.350

$0.291

$0.259

Verical

USA . 10,953 parts In-Stock

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-

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1k+ parts

$0.394

10k+ parts

$0.324

10,953

-

-

$0.394

$0.324

DigiKey

USA . 3,000 parts In-Stock

1+ parts

-

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$0.270

3,000

-

-

-

$0.270

Chip1Stop

Japan . 2,863 parts In-Stock

1+ parts

-

100+ parts

$0.395

1k+ parts

$0.265

10k+ parts

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2,863

-

$0.395

$0.265

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EBV Elektronik

Germany . 2,000 parts In-Stock

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2,000

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Distributors (In-Stock)

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Digiode

USA . 1,285 parts In-Stock

1+ parts

$0.272

100+ parts

-

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1,285

$0.272

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-

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Vyrian

USA . 1,625 parts In-Stock

1+ parts

$0.286

100+ parts

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1,625

$0.286

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-

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TME

Poland . 314 parts In-Stock

1+ parts

$0.950

100+ parts

$0.482

1k+ parts

$0.345

10k+ parts

$0.334

314

$0.950

$0.482

$0.345

$0.334

Chip Stock

USA . 15,500 parts In-Stock

1+ parts

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15,500

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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NAC Semi

USA . 1,000 parts In-Stock

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$1.600

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1,000

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$1.600

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Nova Conductors

Japan . 700 parts In-Stock

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700

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ACDS - Activité Composants Distribution Service

France . 165 parts In-Stock

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165

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Corphita

USA . 1,383 parts In-Stock

1+ parts

$0.257

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1,383

$0.257

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Corohmni

South Africa . 168 parts In-Stock

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$0.286

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168

$0.286

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Continental Prestige Electronics

USA . 2,705 parts In-Stock

1+ parts

$0.622

100+ parts

$0.419

1k+ parts

$0.324

10k+ parts

$0.305

2,705

$0.622

$0.419

$0.324

$0.305

Perfect Parts

USA . 27,785 parts In-Stock

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27,785

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Problanco Electronics

Mexico . 8,023 parts In-Stock

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TANS Electronics

Latvia . 7,575 parts In-Stock

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SupplyDigital Components

Austria . 5,110 parts In-Stock

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Kulean Microsystems

USA . 4,035 parts In-Stock

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Lixinc

USA . 3,464 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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532

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Argo Parts USA

USA . 191 parts In-Stock

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191

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Overview

Enhance your electronic projects with the high-quality 2SC5569-TD-E Power Bipolar Junction Transistor by Onsemi. This NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a collector current of 7A. With a minimum DC current gain of 200 and a nominal transition frequency of 330MHz, this transistor delivers reliable performance. Its small outline package and surface mount capability make it easy to integrate into your designs. Trust Onsemi's reputation for excellence in semiconductor manufacturing and choose the 2SC5569-TD-E for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight, durable, and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications and are easy to interface with other components.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB mounting.

Package Shape: RECTANGULAR

Rectangular shape enables efficient use of space on the PCB layout.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor in a simple configuration.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications where a maximum voltage of 50V is required for operation.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability for the transistor element.

Maximum Collector Current (IC): 7 A

High maximum collector current allows the transistor to handle high power loads.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth finish provides good solderability and reliability for terminal connections.

Nominal Transition Frequency (fT): 330 MHz

High transition frequency enables fast switching speeds for the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5569-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5569-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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