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2SC5200RTU

Onsemi

2SC5200RTU by Onsemi

The Onsemi 2SC5200RTU is a NPN power BJT with max. collector-emitter voltage of 250V, ideal for amplifier applications. Featuring a max. power dissipation of 150W and max. collector current of 17A, it operates at up to 150°C. With a min DC current gain of 55 and transition frequency of 30MHz, this transistor offers high performance in a flange mount package for through-hole mounting.

Median Price

$2.118

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,258 parts In-Stock

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-

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$1.830

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1,258

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$1.830

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Rochester

USA . 1,164 parts In-Stock

1+ parts

-

100+ parts

$2.000

1k+ parts

$1.790

10k+ parts

$1.680

1,164

-

$2.000

$1.790

$1.680

Verical

USA . 783 parts In-Stock

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-

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$2.237

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$2.100

783

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$2.237

$2.100

DigiKey

USA . 161 parts In-Stock

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$2.630

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161

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$2.630

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Distributors (In-Stock)

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Digiode

USA . 2,519 parts In-Stock

1+ parts

$2.109

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2,519

$2.109

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Nova Conductors

Japan . 10 parts In-Stock

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$2.478

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10

$2.478

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Chip Stock

USA . 34,000 parts In-Stock

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VNN

France . 2,902 parts In-Stock

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2,902

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Vyrian

USA . 334 parts In-Stock

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334

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,802 parts In-Stock

1+ parts

$0.400

100+ parts

-

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-

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2,802

$0.400

-

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.257

100+ parts

$1.194

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$1.194

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-

350

$1.257

$1.194

$1.194

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Semicontronic

India . 594 parts In-Stock

1+ parts

$1.560

100+ parts

$1.521

1k+ parts

$1.513

10k+ parts

-

594

$1.560

$1.521

$1.513

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$1.830

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164

$1.830

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Corphita

USA . 1,477 parts In-Stock

1+ parts

$1.998

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1,477

$1.998

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Argo Parts USA

USA . 3,375 parts In-Stock

1+ parts

$2.176

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3,375

$2.176

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Ampacity Inc.

Singapore . 417 parts In-Stock

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$3.390

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417

$3.390

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Microchip USA

USA . 9,323 parts In-Stock

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$13.845

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9,323

$13.845

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QUARKTWIN TECHNOLOGY LTD

USA . 18,652 parts In-Stock

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SupplyDigital Components

Austria . 6,083 parts In-Stock

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6,083

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Kulean Microsystems

USA . 5,642 parts In-Stock

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Metaverse IC Inc.

Canada . 4,120 parts In-Stock

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TANS Electronics

Latvia . 4,111 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Supply Digital

USA . 1,201 parts In-Stock

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Perfect Parts

USA . 657 parts In-Stock

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UHIMA Technologies

Türkiye . 442 parts In-Stock

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442

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Continental Prestige Electronics

USA . 367 parts In-Stock

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$1.830

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367

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$1.830

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Problanco Electronics

Mexico . 272 parts In-Stock

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272

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Netroflash

USA . 50 parts In-Stock

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$2.428

1k+ parts

$2.354

10k+ parts

$2.305

50

-

$2.428

$2.354

$2.305

Robosynatics

Brazil . 20 parts In-Stock

1+ parts

-

100+ parts

$3.791

1k+ parts

$3.791

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$3.791

20

-

$3.791

$3.791

$3.791

Lucentia Tech

USA . 20 parts In-Stock

1+ parts

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$3.791

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$3.791

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$3.791

20

-

$3.791

$3.791

$3.791

Overview

Unleash the power of high-quality amplification with the 2SC5200RTU by Onsemi. Designed by a trusted manufacturer, this Power Bipolar Junction Transistor (BJT) is perfect for various amplifier applications. With a maximum power dissipation of 150W and a maximum collector-emitter voltage of 250V, this NPN transistor offers unmatched performance and reliability. Say goodbye to subpar sound quality and hello to crystal-clear audio with the 2SC5200RTU. Upgrade your amplifiers today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation capability, this transistor can handle high power loads and operate efficiently without overheating.

Maximum Collector-Emitter Voltage: 250 V

This high voltage rating allows for the transistor to be used in a wide range of applications, including those requiring higher voltage handling capabilities.

Nominal Transition Frequency (fT): 30 MHz

The high transition frequency indicates that this transistor can operate at higher frequencies with good performance, making it suitable for amplification of high-frequency signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5200RTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

55

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5200RTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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