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2SC5994-TD-E

Onsemi

2SC5994-TD-E by Onsemi

Onsemi's 2SC5994-TD-E is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 2A, ideal for switching applications. With a min. DC current gain of 40 and nominal transition frequency of 420MHz, it offers high performance in a small outline package suitable for surface mount technology.

Median Price

$0.343

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,753 parts In-Stock

1+ parts

$0.690

100+ parts

$0.286

1k+ parts

$0.247

10k+ parts

-

7,753

$0.690

$0.286

$0.247

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Arrow

USA . 200 parts In-Stock

1+ parts

$0.690

100+ parts

$0.286

1k+ parts

$0.165

10k+ parts

-

200

$0.690

$0.286

$0.165

-

Newark

USA . 7 parts In-Stock

1+ parts

$0.760

100+ parts

$0.399

1k+ parts

-

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7

$0.760

$0.399

-

-

DigiKey

USA . 923 parts In-Stock

1+ parts

$0.870

100+ parts

$0.350

1k+ parts

$0.242

10k+ parts

$0.181

923

$0.870

$0.350

$0.242

$0.181

Rochester

USA . 15,600 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.185

10k+ parts

$0.165

15,600

-

$0.224

$0.185

$0.165

Verical

USA . 14,600 parts In-Stock

1+ parts

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$0.207

14,600

-

-

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$0.207

Master Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.246

10k+ parts

$0.239

4,000

-

-

$0.246

$0.239

Farnell

UK . 1,108 parts In-Stock

1+ parts

-

100+ parts

$0.228

1k+ parts

$0.183

10k+ parts

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1,108

-

$0.228

$0.183

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Element14

Singapore . 1,108 parts In-Stock

1+ parts

-

100+ parts

$0.399

1k+ parts

$0.310

10k+ parts

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1,108

-

$0.399

$0.310

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Chip1Stop

Japan . 828 parts In-Stock

1+ parts

-

100+ parts

$0.287

1k+ parts

$0.224

10k+ parts

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828

-

$0.287

$0.224

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 330 parts In-Stock

1+ parts

$0.147

100+ parts

-

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330

$0.147

-

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Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$0.283

100+ parts

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26

$0.283

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Chip Stock

USA . 7,319 parts In-Stock

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7,319

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Vyrian

USA . 6,751 parts In-Stock

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6,751

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IBS Electronics

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.237

10k+ parts

$0.227

4,000

-

-

$0.237

$0.227

Bristol Electronics

USA . 2,000 parts In-Stock

1+ parts

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2,000

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

-

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$0.262

10k+ parts

$0.241

2,000

-

-

$0.262

$0.241

ACDS - Activité Composants Distribution Service

France . 175 parts In-Stock

1+ parts

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175

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Distributors (Availability)

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Corphita

USA . 178 parts In-Stock

1+ parts

$0.140

100+ parts

-

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178

$0.140

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Corohmni

South Africa . 223 parts In-Stock

1+ parts

$0.155

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223

$0.155

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Semicontronic

India . 6,211 parts In-Stock

1+ parts

$0.187

100+ parts

$0.182

1k+ parts

$0.181

10k+ parts

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6,211

$0.187

$0.182

$0.181

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Component Stockers USA

USA . 53,444 parts In-Stock

1+ parts

$0.250

100+ parts

$0.150

1k+ parts

$0.110

10k+ parts

$0.240

53,444

$0.250

$0.150

$0.110

$0.240

Argo Parts USA

USA . 1,254 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

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10k+ parts

$0.275

1,254

$0.283

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-

$0.275

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.283

100+ parts

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1k+ parts

$0.269

10k+ parts

$0.263

500

$0.283

-

$0.269

$0.263

Continental Prestige Electronics

USA . 793 parts In-Stock

1+ parts

$0.446

100+ parts

$0.283

1k+ parts

$0.177

10k+ parts

$0.166

793

$0.446

$0.283

$0.177

$0.166

Aztec Data Supply Inc.

USA . 3,173 parts In-Stock

1+ parts

$1.215

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3,173

$1.215

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,208 parts In-Stock

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SupplyDigital Components

Austria . 5,555 parts In-Stock

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Perfect Parts

USA . 4,293 parts In-Stock

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4,293

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Kepictronics

USA . 3,500 parts In-Stock

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Problanco Electronics

Mexico . 1,638 parts In-Stock

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Kulean Microsystems

USA . 1,305 parts In-Stock

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1,305

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TANS Electronics

Latvia . 1,225 parts In-Stock

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1,225

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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354

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Authorized Procurement Solutions

USA . 181 parts In-Stock

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181

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Overview

Unleash the power of innovation with the 2SC5994-TD-E by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) is designed for seamless switching applications. With a maximum collector-emitter voltage of 50V and a DC current gain of 40, this NPN transistor offers unparalleled performance and reliability. Whether you're in the automotive, industrial, or consumer electronics industry, this product is sure to elevate your projects to new heights. Trust Onsemi for quality, trust the 2SC5994-TD-E for exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, extending its lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and can handle higher currents compared to PNP transistors.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in electronic circuits.

Surface Mount: YES

Surface mount technology allows for easy and secure mounting on PCBs, saving space and improving overall circuit efficiency.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high voltage fluctuations, ensuring stability in the circuit.

Maximum Collector Current (IC): 2 A

Capable of handling high currents, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 420 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5994-TD-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5994-TD-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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