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NJVMJD44H11T4G-VF01

Onsemi

NJVMJD44H11T4G-VF01 by Onsemi

NJVMJD44H11T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 40, VCE of 80V, and IC of 8A. Ideal for switching applications, it operates b/w -65 to 150°C. This small outline package with Gull Wing terminals is surface mountable and AEC-Q101 compliant.

Median Price

$0.556

Lifecycle Status

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9

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1k+

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Adafruit Industries

USA . 200 parts In-Stock

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$0.881

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$0.837

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Mouser Electronics

USA . 1,930 parts In-Stock

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Farnell

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Element14

Singapore . 1,905 parts In-Stock

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Digiode

USA . 1,611 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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Bristol Electronics

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Chip Stock

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Vyrian

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Semicontronic

India . 893 parts In-Stock

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$0.217

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$0.212

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Ampacity Inc.

Singapore . 876 parts In-Stock

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Corohmni

South Africa . 205 parts In-Stock

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Argo Parts USA

USA . 131 parts In-Stock

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Corphita

USA . 504 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,056 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.558

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.881

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$0.837

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Component Stockers USA

USA . 7 parts In-Stock

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$0.910

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Perfect Parts

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SupplyDigital Components

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TANS Electronics

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RC Electronics

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Futuretech Components

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Continental Prestige Electronics

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Problanco Electronics

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UHIMA Technologies

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iodParts Technologies Inc.

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Component Connect

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Kulean Microsystems

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Unlock the power of high-quality performance with the NJVMJD44H11T4G-VF01 by Onsemi. Designed for switching applications, this NPN Power Bipolar Junction Transistor offers unparalleled reliability and efficiency. With a maximum operating temperature of 150°C and a collector-emitter voltage of 80V, this transistor is a game-changer in the industry. Whether you're looking to enhance your electronics project or streamline your production process, this product delivers exceptional value and benefits. Trust Onsemi's reputation for excellence and elevate your designs with the NJVMJD44H11T4G-VF01.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, providing protection against physical damage.

Polarity or Channel Type: NPN

The NPN configuration allows the transistor to operate as a switching device, making it suitable for various electronic applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits using this transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in turning circuits on and off.

Surface Mount: YES

Being surface mountable, this transistor is easy to assemble on circuit boards, saving space and improving overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering onto PCBs, ensuring a secure and stable connection.

Terminal Form: GULL WING

The gull wing terminal form provides a robust mechanical connection and facilitates automated soldering during manufacturing.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and integration of this transistor into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for compact and efficient circuit designs.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides amplification capability for small signal applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in demanding environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

The silicon transistor element material offers superior performance and reliability for electronic circuits.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C enables this transistor to function in extreme cold environments.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8A, this transistor can handle high current loads in various circuit applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides a reliable and low-resistance connection, ensuring stable performance over time.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation and connection of this transistor in circuits.

Case Connection: COLLECTOR

The case connection at the collector terminal provides easy access for connecting external components to the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds ensures that the transistor is not subjected to excessive heat during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable and effective soldering during the manufacturing process.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transistor meets stringent automotive industry requirements for quality and reliability.

Nominal Transition Frequency (fT): 85 MHz

The high nominal transition frequency of 85 MHz indicates that this transistor can swiftly switch between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD44H11T4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD44H11T4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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