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TIP122G

Onsemi

TIP122G by Onsemi

TIP122G by Onsemi is a NPN power BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With an hFE of 1000 and fT of 4MHz, this transistor operates up to 150°C.

Median Price

$0.722

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,740 parts In-Stock

1+ parts

$0.282

100+ parts

$0.245

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-

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8,740

$0.282

$0.245

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Bürklin Elektronik

Germany . 730 parts In-Stock

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$0.320

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730

$0.320

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Adafruit Industries

USA . 600 parts In-Stock

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$0.382

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$0.348

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$0.313

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600

$0.382

$0.348

$0.313

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Distrelec

Netherlands . 450 parts In-Stock

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$0.422

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$0.398

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$0.375

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450

$0.422

$0.398

$0.375

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Farnell

UK . 20,354 parts In-Stock

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$0.679

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$0.348

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$0.228

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$0.212

20,354

$0.679

$0.348

$0.228

$0.212

Element14

Singapore . 5,699 parts In-Stock

1+ parts

$0.766

100+ parts

$0.464

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$0.312

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$0.306

5,699

$0.766

$0.464

$0.312

$0.306

Mouser Electronics

USA . 18,014 parts In-Stock

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$1.160

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$0.476

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DigiKey

USA . 6,219 parts In-Stock

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$1.160

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$0.476

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$0.335

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6,219

$1.160

$0.476

$0.335

$0.255

Newark

USA . 8,872 parts In-Stock

1+ parts

$1.250

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$0.570

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$0.399

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$0.375

8,872

$1.250

$0.570

$0.399

$0.375

Verical

USA . 10,700 parts In-Stock

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$0.993

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$0.650

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$0.595

10,700

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$0.595

Master Electronics

USA . 10,700 parts In-Stock

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$0.844

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$0.552

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$0.506

10,700

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$0.552

$0.506

Future Electronics

Canada . 6,452 parts In-Stock

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$0.395

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$0.375

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6,452

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$0.395

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$0.360

EBV Elektronik

Germany . 2,500 parts In-Stock

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Chip1Stop

Japan . 35 parts In-Stock

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Digiode

USA . 159 parts In-Stock

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$0.276

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Nova Conductors

Japan . 100 parts In-Stock

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$0.374

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$0.374

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TME

Poland . 320 parts In-Stock

1+ parts

$1.090

100+ parts

$0.454

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$0.330

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$0.295

320

$1.090

$0.454

$0.330

$0.295

Component Electronics Inc.

Canada . 23 parts In-Stock

1+ parts

$1.150

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$0.870

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$0.750

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23

$1.150

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$0.750

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Maritex

Poland . 264 parts In-Stock

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$1.174

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$0.555

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$0.468

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$1.174

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Forefront Electronics and Design

USA . 2 parts In-Stock

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$2.940

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IBS Electronics

USA . 58,908 parts In-Stock

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NAC Semi

USA . 36,550 parts In-Stock

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Chip Stock

USA . 35,220 parts In-Stock

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Vyrian

USA . 9,604 parts In-Stock

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Semtec, LLC

USA . 4,750 parts In-Stock

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Sensible Micro Corp

USA . 1,067 parts In-Stock

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Lantek

USA . 650 parts In-Stock

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650

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Flip Electronics

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456

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ACDS - Activité Composants Distribution Service

France . 450 parts In-Stock

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ComSIT Distribution GmbH

Germany . 406 parts In-Stock

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PUI

USA . 200 parts In-Stock

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QIE Inc.

USA . 106 parts In-Stock

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Speed Components Ltd

Israel . 97 parts In-Stock

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NexGen Digital

USA . 55 parts In-Stock

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LWI Electronics Inc

India . 54 parts In-Stock

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Bristol Electronics

USA . 30 parts In-Stock

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SOS electronic

Slovakia . 5 parts In-Stock

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$0.764

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$0.731

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5

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$0.764

$0.731

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,512 parts In-Stock

1+ parts

$0.217

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$0.217

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Semicontronic

India . 8,014 parts In-Stock

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$0.225

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$0.219

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Corphita

USA . 501 parts In-Stock

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$0.261

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501

$0.261

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Corohmni

South Africa . 358 parts In-Stock

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$0.290

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Argo Parts USA

USA . 3,533 parts In-Stock

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$0.367

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$0.356

3,533

$0.367

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Netroflash

USA . 50 parts In-Stock

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$0.374

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$0.367

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50

$0.374

$0.367

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.382

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$0.348

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$0.313

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600

$0.382

$0.348

$0.313

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Continental Prestige Electronics

USA . 9,780 parts In-Stock

1+ parts

$0.490

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$0.263

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$0.211

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9,780

$0.490

$0.263

$0.211

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Modulus Dynamics

Lithuania . 21,414 parts In-Stock

1+ parts

$1.482

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$1.482

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$1.482

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21,414

$1.482

$1.482

$1.482

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Aztec Data Supply Inc.

USA . 112 parts In-Stock

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$1.791

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Perfect Parts

USA . 92,439 parts In-Stock

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RC Electronics

USA . 63,027 parts In-Stock

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$0.380

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Kepictronics

USA . 47,725 parts In-Stock

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Eastek

USA . 26,100 parts In-Stock

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Infinite Electronics LLP (Excess)

. 12,872 parts In-Stock

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Microchip USA

USA . 6,855 parts In-Stock

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SupplyDigital Components

Austria . 6,385 parts In-Stock

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Kulean Microsystems

USA . 5,895 parts In-Stock

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TANS Electronics

Latvia . 3,057 parts In-Stock

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Robosynatics

Brazil . 1,500 parts In-Stock

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$3.551

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$3.551

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$3.551

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$3.551

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$3.551

Lucentia Tech

USA . 1,500 parts In-Stock

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$3.551

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$3.551

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$3.551

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$3.551

$3.551

$3.551

Problanco Electronics

Mexico . 835 parts In-Stock

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835

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Glotronic Ltd.

UK . 803 parts In-Stock

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GreenTree Electronics

Israel . 650 parts In-Stock

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650

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UHIMA Technologies

Türkiye . 298 parts In-Stock

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ChipstoGo Electronic ltd

UK . 150 parts In-Stock

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Allen Electronics Distributors

USA . 50 parts In-Stock

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Overview

Unleash the power of innovation with the TIP122G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor boasts superior quality and reliability. Ideal for amplifier applications, the TIP122G offers seamless performance and efficiency like no other. With a maximum power dissipation of 65W and a collector current of 5A, this NPN transistor is designed to exceed expectations. Elevate your projects with the TIP122G and experience unparalleled value and benefits that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN configuration allows for easier integration into common circuit designs, increasing compatibility with existing systems.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies circuit design and reduces component count, saving space and cost.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal amplification circuits.

Maximum Power Dissipation (Abs): 65 W

High power dissipation capability allows the transistor to handle high loads and prevents overheating, increasing overall reliability.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides flexibility in circuit design and allows for use in a variety of applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP122G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP122G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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