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NJVMJD47T4G

Onsemi

NJVMJD47T4G by Onsemi

NJVMJD47T4G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 250V, max operating temp of 150°C, and max power dissipation of 15W. With a small outline package style, it's ideal for high-power switching circuits in automotive electronics.

Median Price

$0.245

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 115 parts In-Stock

1+ parts

$0.451

100+ parts

$0.429

1k+ parts

$0.429

10k+ parts

-

115

$0.451

$0.429

$0.429

-

Mouser Electronics

USA . 1,666 parts In-Stock

1+ parts

$1.120

100+ parts

$0.457

1k+ parts

$0.337

10k+ parts

$0.236

1,666

$1.120

$0.457

$0.337

$0.236

Verical

USA . 92,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.217

92,500

-

-

-

$0.217

DigiKey

USA . 2,655 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.245

2,655

-

-

-

$0.245

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.243

2,500

-

-

-

$0.243

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 547 parts In-Stock

1+ parts

$0.390

100+ parts

-

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-

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547

$0.390

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.438

100+ parts

-

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50

$0.438

-

-

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Flip Electronics

USA . 85,000 parts In-Stock

1+ parts

-

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85,000

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

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10,000

-

-

-

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Chip Stock

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Vyrian

USA . 2,239 parts In-Stock

1+ parts

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2,239

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,453 parts In-Stock

1+ parts

$0.207

100+ parts

-

1k+ parts

-

10k+ parts

-

2,453

$0.207

-

-

-

Corohmni

South Africa . 290 parts In-Stock

1+ parts

$0.243

100+ parts

-

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290

$0.243

-

-

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Corphita

USA . 1,546 parts In-Stock

1+ parts

$0.369

100+ parts

-

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-

10k+ parts

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1,546

$0.369

-

-

-

Continental Prestige Electronics

USA . 3,189 parts In-Stock

1+ parts

$0.438

100+ parts

-

1k+ parts

-

10k+ parts

$0.429

3,189

$0.438

-

-

$0.429

Argo Parts USA

USA . 687 parts In-Stock

1+ parts

$0.438

100+ parts

-

1k+ parts

-

10k+ parts

$0.425

687

$0.438

-

-

$0.425

Semicontronic

India . 2,451 parts In-Stock

1+ parts

$0.450

100+ parts

$0.439

1k+ parts

$0.436

10k+ parts

-

2,451

$0.450

$0.439

$0.436

-

Advanced Electronics

New Zealand . 115 parts In-Stock

1+ parts

$0.451

100+ parts

$0.429

1k+ parts

$0.429

10k+ parts

-

115

$0.451

$0.429

$0.429

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$1.625

100+ parts

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100

$1.625

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Lixinc

USA . 13,741 parts In-Stock

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13,741

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ChipstoGo Electronic ltd

UK . 10,000 parts In-Stock

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10,000

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iodParts Technologies Inc.

India . 10,000 parts In-Stock

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Kulean Microsystems

USA . 6,532 parts In-Stock

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6,532

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Problanco Electronics

Mexico . 5,964 parts In-Stock

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5,964

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TANS Electronics

Latvia . 5,188 parts In-Stock

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5,188

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SupplyDigital Components

Austria . 5,012 parts In-Stock

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5,012

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.429

1k+ parts

$0.416

10k+ parts

$0.407

1,000

-

$0.429

$0.416

$0.407

UHIMA Technologies

Türkiye . 853 parts In-Stock

1+ parts

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853

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Overview

Discover the power and reliability of the NJVMJD47T4G Power Bipolar Junction Transistor by Onsemi. With a focus on quality and innovation, Onsemi is a leading manufacturer in the industry, known for its durable products. Ideal for switching applications, this NPN transistor offers customers seamless performance and efficiency. Experience the benefits of this product's high power dissipation, low operating temperature, and versatile package style. Trust Onsemi to deliver top-of-the-line solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, perfect for applications where weight and longevity are important factors.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other components in a circuit, making this product versatile and compatible with a wide range of systems.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the chances of errors, making this product ideal for applications where ease of use is crucial.

Transistor Application: SWITCHING

Designed for switching applications, this product offers fast and efficient switching capabilities, making it suitable for systems that require high performance.

Surface Mount: YES

With surface mount capability, this product can be easily mounted on a PCB, saving space and allowing for more compact designs in electronic systems.

Package Shape: RECTANGULAR

The rectangular package shape makes this product easy to handle and install in various devices, ensuring a convenient and hassle-free assembly process.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, reducing the risk of signal loss or interference, making this product a reliable choice for demanding applications.

No. of Elements: 1

With a single element design, this product offers simplicity and efficiency in circuit design, making it a cost-effective and practical choice for electronic projects.

No. of Terminals: 2

Featuring two terminals, this product allows for easy installation and connection, providing a straightforward and user-friendly experience for users.

Maximum Power Dissipation (Abs): 15 W

With a maximum power dissipation of 15 watts, this product can handle high power levels, making it suitable for applications that require robust performance and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD47T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD47T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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