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BD14016S

Onsemi

BD14016S by Onsemi

The Onsemi BD14016S is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications, it has a min hFE of 100 and operates up to 150°C. The through-hole package with matte tin finish is suitable for various electronic designs.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.330

100+ parts

$0.313

1k+ parts

$0.313

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50

$0.330

$0.313

$0.313

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Mouser Electronics

USA . 2,573 parts In-Stock

1+ parts

$0.710

100+ parts

$0.429

1k+ parts

$0.305

10k+ parts

$0.270

2,573

$0.710

$0.429

$0.305

$0.270

DigiKey

USA . 5,445 parts In-Stock

1+ parts

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$0.270

5,445

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$0.270

Flip Electronics (Authorized)

USA . 3,914 parts In-Stock

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3,914

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Chip1Stop

Japan . 5 parts In-Stock

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Verical

USA . 5 parts In-Stock

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5

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.305

100+ parts

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500

$0.305

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Digiode

USA . 2,319 parts In-Stock

1+ parts

$0.314

100+ parts

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2,319

$0.314

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VNN

France . 18,985 parts In-Stock

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18,985

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Flip Electronics

USA . 5,445 parts In-Stock

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5,445

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IBS Electronics

USA . 5,445 parts In-Stock

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$0.379

5,445

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$0.379

Chip Stock

USA . 3,500 parts In-Stock

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3,500

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Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 1,595 parts In-Stock

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1,595

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A&K Electronics

USA . 298 parts In-Stock

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298

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Bristol Electronics

USA . 298 parts In-Stock

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298

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,690 parts In-Stock

1+ parts

$0.281

100+ parts

-

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1,690

$0.281

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Continental Prestige Electronics

USA . 6,257 parts In-Stock

1+ parts

$0.290

100+ parts

-

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$0.284

6,257

$0.290

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-

$0.284

Argo Parts USA

USA . 2,205 parts In-Stock

1+ parts

$0.290

100+ parts

-

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$0.281

2,205

$0.290

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-

$0.281

Corphita

USA . 2,265 parts In-Stock

1+ parts

$0.297

100+ parts

-

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2,265

$0.297

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Modulus Dynamics

Lithuania . 1,000 parts In-Stock

1+ parts

$0.321

100+ parts

$0.318

1k+ parts

$0.309

10k+ parts

-

1,000

$0.321

$0.318

$0.309

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.330

100+ parts

$0.313

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$0.313

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50

$0.330

$0.313

$0.313

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Corohmni

South Africa . 104 parts In-Stock

1+ parts

$0.330

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104

$0.330

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Aztec Data Supply Inc.

USA . 856 parts In-Stock

1+ parts

$0.456

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856

$0.456

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Semicontronic

India . 1,380 parts In-Stock

1+ parts

$0.610

100+ parts

$0.595

1k+ parts

$0.592

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1,380

$0.610

$0.595

$0.592

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Component Stockers USA

USA . 13,154 parts In-Stock

1+ parts

$0.670

100+ parts

$0.410

1k+ parts

$0.290

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13,154

$0.670

$0.410

$0.290

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Microchip USA

USA . 2,472 parts In-Stock

1+ parts

$4.680

100+ parts

$4.650

1k+ parts

$4.640

10k+ parts

$4.620

2,472

$4.680

$4.650

$4.640

$4.620

Metaverse IC Inc.

Canada . 19,920 parts In-Stock

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Lixinc

USA . 10,493 parts In-Stock

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TANS Electronics

Latvia . 8,249 parts In-Stock

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SupplyDigital Components

Austria . 7,992 parts In-Stock

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Kulean Microsystems

USA . 6,211 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,696 parts In-Stock

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Problanco Electronics

Mexico . 4,326 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Alle Elektronik GmbH

Germany . 3,797 parts In-Stock

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3,797

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Perfect Parts

USA . 3,773 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,411 parts In-Stock

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2,411

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ChipstoGo Electronic ltd

UK . 2,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Supply Digital

USA . 1,695 parts In-Stock

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1,695

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UHIMA Technologies

Türkiye . 515 parts In-Stock

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515

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Overview

Unlock the power of the BD14016S from Onsemi, a high-quality Power Bipolar Junction Transistor perfect for switching applications. Manufactured by the reputable Onsemi, this PNP transistor offers exceptional performance with a maximum collector-emitter voltage of 80V and a maximum collector current of 1.5A. Its durable plastic/epoxy package body and single configuration make it ideal for various projects. Experience reliable and efficient operation with the BD14016S, providing unmatched value and benefits to all customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors, increasing versatility in design.

Configuration: SINGLE

With a single configuration, this transistor is straightforward to use and is ideal for simple switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in controlling currents.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement on a circuit board, optimizing space utilization.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection, ensuring stable operation in various environments.

No. of Terminals: 3

The three terminals offer flexibility in circuit design, allowing for customization to meet specific requirements.

Maximum Power Dissipation (Abs): 12.5 W

With a high maximum power dissipation, this transistor can handle high-power applications without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and secure attachment in electronic equipment, enhancing reliability.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain ensures consistent performance and amplification capabilities in various circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and operate reliably in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for reliable operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

The silicon material of the transistor element provides high efficiency and reliability in various applications.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle moderate current levels in switching applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals ensures good conductivity and corrosion resistance, extending the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures correct alignment, making the transistor user-friendly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD14016S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD14016S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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