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TIP122-S

Bourns

TIP122-S by Bourns

Bourns TIP122-S is a NPN Darlington transistor with hFE of 1000, VCE of 100V, and IC of 5A. Ideal for power applications in various industries due to its high current gain and voltage capabilities. Package style is flange mount with through-hole terminals for easy installation.

Median Price

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5

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ComSIT Distribution GmbH

Germany . 5,320 parts In-Stock

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ComSIT USA

USA . 5,320 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 925 parts In-Stock

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925

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Vyrian

USA . 260 parts In-Stock

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Nova Conductors

Japan . 207 parts In-Stock

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Corohmni

South Africa . 619 parts In-Stock

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$0.451

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Aztec Data Supply Inc.

USA . 2,074 parts In-Stock

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$1.070

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Ampacity Inc.

Singapore . 2,550 parts In-Stock

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$9.050

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Semicontronic

India . 1,059 parts In-Stock

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$14.050

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$13.699

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$13.628

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AZTECH Wire

Italy . 1,713 parts In-Stock

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$19.684

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Continental Prestige Electronics

USA . 5,587 parts In-Stock

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Argo Parts USA

USA . 5,137 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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Bastille Electronics

Australia . 140 parts In-Stock

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Overview

Unlock the power of the TIP122-S by Bourns, a high-quality Power Bipolar Junction Transistor ideal for a variety of applications. With Bourns' reputation for excellence in manufacturing, you can trust in the reliability and durability of this NPN Darlington transistor. Whether you're looking to enhance your audio amplifiers, motor control systems, or LED drivers, the TIP122-S delivers superior performance and efficiency. Experience the value and benefits of Bourns' TIP122-S, designed to meet your power transistor needs with precision and effectiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance and reliability.

Configuration: DARLINGTON

Darlington configuration allows for high current gain and low saturation voltage, making the transistor suitable for driving heavy loads.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and install the transistor in various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide easy soldering and strong mechanical connection, ensuring stable operation of the transistor.

Minimum DC Current Gain (hFE): 1000

High minimum DC current gain ensures consistent and reliable amplification of signals in the transistor.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltages without breakdown, offering increased safety and reliability.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and performance, ensuring efficient operation of the transistor.

Maximum Collector Current (IC): 5 A

High maximum collector current allows the transistor to handle larger currents, making it suitable for power applications.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection of the transistor in circuits, making it user-friendly.

Case Connection: COLLECTOR

Collector connection allows for easy connection to other components in the circuit, ensuring efficient operation of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP122-S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Bourns

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

TIP122-S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Bourns

Bourns, Inc. is an American electronics company that develops, manufactures and supplies electronic components for a variety of industries including automotive, industrial, instrumentation, medical electronics, consumer equipment and portable electronics. Established in Altadena, California in 1947 by Marlan and Rosemary Bourns, graduates of the University of Michigan, the company was founded to develop and sell electronic components and sensors to the aerospace industry. Bourns has 15 manufacturing facilities around the world and has continued growing through the development of new products and technologies as well as through acquisitions. The company has approximately 9000 employees worldwide.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

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