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FZT849TA

Diodes Incorporated

FZT849TA by Diodes Incorporated

FZT849TA by Diodes Inc. is a NPN BJT transistor with 30V VCEO, 7A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 3W and operating temp up to 150°C, it's suitable for various electronic designs.

Median Price

$0.476

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,415 parts In-Stock

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$1.830

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$0.777

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Verical

USA . 33,000 parts In-Stock

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Avnet

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DigiKey

USA . 6,954 parts In-Stock

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Arrow

USA . 4,000 parts In-Stock

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$0.386

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$0.342

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Distributors (In-Stock)

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Greenchips

USA . 948 parts In-Stock

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$0.342

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$0.342

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$0.342

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$0.318

948

$0.342

$0.342

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$0.318

Freelance Electronics

USA . 420 parts In-Stock

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$0.344

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$0.361

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$0.341

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420

$0.344

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Nova Conductors

Japan . 76 parts In-Stock

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$0.445

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DF Sales Co.

USA . 1,370 parts In-Stock

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$0.588

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DF Sales Co.

USA . 1,370 parts In-Stock

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$0.588

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TME

Poland . 46 parts In-Stock

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$1.380

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$0.584

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$0.417

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$1.380

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Forefront Electronics and Design

USA . 1 parts In-Stock

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$1.720

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NAC Semi

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Chip Stock

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Vyrian

USA . 37,062 parts In-Stock

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IBS Electronics

USA . 22,000 parts In-Stock

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$0.532

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$0.729

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 10,000 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

USA . 2,649 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,307 parts In-Stock

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Bristol Electronics

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Sensible Micro Corp

USA . 1,798 parts In-Stock

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$0.361

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$0.333

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Sea View Technologies

USA . 1,790 parts In-Stock

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Corel Iberica Componentes, S.L.

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QIE Inc.

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Electronic Expediters

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ComSIT Distribution GmbH

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Freddi Giovanni

Italy . 1,000 parts In-Stock

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Lighthouse Electronics, Inc.

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SIE Connect GmbH - GreenChips

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Whistler Technology

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Prism Electronics

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Mil-Aero Solutions, Inc.

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ComSIT USA

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North Shore Components

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ACDS - Activité Composants Distribution Service

France . 378 parts In-Stock

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Dan-Mar Components

USA . 378 parts In-Stock

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A&K Electronics

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Rotakorn

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Cyclops Electronics Ltd

UK . 150 parts In-Stock

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Rebound Electronics

UK . 141 parts In-Stock

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Florida Circuit

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LWI Electronics Inc

India . 110 parts In-Stock

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Resion

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Electronics Depot

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Elcom Components

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Distributors (Availability)

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Aranea Global

USA . 500 parts In-Stock

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$0.436

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$0.419

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500

$0.436

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Continental Prestige Electronics

USA . 5,747 parts In-Stock

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$0.445

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$0.436

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Argo Parts USA

USA . 2,392 parts In-Stock

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$0.445

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$0.432

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$0.432

Modulus Dynamics

Lithuania . 3,752 parts In-Stock

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$1.189

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$1.189

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$1.189

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$1.189

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Corohmni

South Africa . 384 parts In-Stock

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$1.270

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Aztec Data Supply Inc.

USA . 659 parts In-Stock

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$1.717

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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GreenTree Electronics

Israel . 70,000 parts In-Stock

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Eastek

USA . 53,000 parts In-Stock

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$0.456

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QUARKTWIN TECHNOLOGY LTD

USA . 19,005 parts In-Stock

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Perfect Parts

USA . 18,361 parts In-Stock

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Lixinc

USA . 7,132 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 7,015 parts In-Stock

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iodParts Technologies Inc.

India . 5,574 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Assy Fe

Spain . 1,550 parts In-Stock

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Kepictronics

USA . 1,296 parts In-Stock

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Glotronic Ltd.

UK . 800 parts In-Stock

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Overview

Looking for a reliable Power Bipolar Junction Transistor for your switching applications? Look no further than the FZT849TA by Diodes Incorporated. With a maximum collector current of 7A and a nominal transition frequency of 100MHz, this NPN transistor offers top-notch performance in a compact small outline package. Trust in Diodes Incorporated's reputation for high-quality components to deliver the power and efficiency you need. Upgrade your designs with the FZT849TA and experience the difference in performance and reliability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for high efficiency and low noise performance in switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation.

Surface Mount: YES

Surface mount capability makes installation and assembly easy and convenient.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into circuit boards and layouts.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections for stable performance.

No. of Terminals: 4

Four terminals offer flexibility in connecting to other components in the circuit.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle high power loads with ease.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150°C ensures stable performance in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle high voltage applications.

Transistor Element Material: SILICON

The use of silicon transistor element material ensures high performance and reliability.

Maximum Collector Current (IC): 7 A

A maximum collector current of 7A allows for handling high current loads without overheating.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and layout.

Case Connection: COLLECTOR

Case connection to collector ensures efficient thermal management and performance.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for easy and reliable soldering during assembly.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100MHz, this transistor offers high-speed performance for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT849TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT849TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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