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FZT855TA

Diodes Incorporated

FZT855TA by Diodes Incorporated

FZT855TA by Diodes Inc. is a NPN BJT transistor with 150V VCE, 5A IC, and 12.8W Ptot. Ideal for switching applications, it has hFE of 100, operates up to 150°C, and features Gull Wing terminals in a small outline package.

Median Price

$0.848

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 300 parts In-Stock

1+ parts

$1.810

100+ parts

$0.739

1k+ parts

$0.514

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300

$1.810

$0.739

$0.514

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Mouser Electronics

USA . 283 parts In-Stock

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$2.060

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$0.848

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283

$2.060

$0.848

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Master Electronics

USA . 520 parts In-Stock

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$3.480

100+ parts

$1.280

1k+ parts

$0.471

10k+ parts

$0.405

520

$3.480

$1.280

$0.471

$0.405

Verical

USA . 1,000 parts In-Stock

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$0.568

10k+ parts

$0.447

1,000

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$0.568

$0.447

Farnell

UK . 672 parts In-Stock

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$0.525

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$0.352

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672

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$0.525

$0.352

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Element14

Singapore . 572 parts In-Stock

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$0.848

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$0.720

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572

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$0.848

$0.720

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Arrow

USA . 12 parts In-Stock

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$0.404

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12

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$0.404

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Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.418

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450

$0.418

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TME

Poland . 344 parts In-Stock

1+ parts

$1.460

100+ parts

$0.715

1k+ parts

$0.551

10k+ parts

$0.526

344

$1.460

$0.715

$0.551

$0.526

Vyrian

USA . 109,467 parts In-Stock

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IBS Electronics

USA . 37,000 parts In-Stock

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$0.722

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$0.701

37,000

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$0.722

$0.701

NAC Semi

USA . 16,000 parts In-Stock

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$0.567

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16,000

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$0.567

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Standard Data Resources

USA . 6,000 parts In-Stock

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6,000

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3,195 parts In-Stock

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3,195

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Lantek

USA . 2,000 parts In-Stock

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2,000

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Chip Stock

USA . 1,125 parts In-Stock

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QIE Inc.

USA . 963 parts In-Stock

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963

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Bristol Electronics

USA . 932 parts In-Stock

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932

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Odi Ramu Company

Canada . 896 parts In-Stock

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896

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Inventory MP

USA . 838 parts In-Stock

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838

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Holdelec - ElecDif-Pro

France . 794 parts In-Stock

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794

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Martec Srl

Italy . 793 parts In-Stock

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793

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Prism Electronics

USA . 718 parts In-Stock

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718

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ECAB

Sweden . 285 parts In-Stock

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285

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ACDS - Activité Composants Distribution Service

France . 271 parts In-Stock

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271

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Micros

Poland . 189 parts In-Stock

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$0.461

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189

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Partservice

France . 189 parts In-Stock

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$0.969

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$0.461

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$0.461

189

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$0.969

$0.461

$0.461

Micros sp.j. W. Kędra i J. Lic

Poland . 189 parts In-Stock

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100+ parts

$1.014

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$0.483

10k+ parts

$0.483

189

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$1.014

$0.483

$0.483

PC Components Company LLC

USA . 94 parts In-Stock

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94

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North Shore Components

USA . 84 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

$0.397

10k+ parts

$0.389

1,000

$0.418

-

$0.397

$0.389

Continental Prestige Electronics

USA . 290 parts In-Stock

1+ parts

$0.880

100+ parts

$0.538

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$0.411

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290

$0.880

$0.538

$0.411

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Corohmni

South Africa . 66 parts In-Stock

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$1.129

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$1.129

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Lixinc

USA . 18,613 parts In-Stock

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Perfect Parts

USA . 12,114 parts In-Stock

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Glotronic Ltd.

UK . 11,200 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Argo Parts USA

USA . 2,434 parts In-Stock

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2,434

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iodParts Technologies Inc.

India . 2,332 parts In-Stock

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2,332

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Ashlea Components Ltd (Excess)

UK . 793 parts In-Stock

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793

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Component Connect

USA . 793 parts In-Stock

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793

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Kepictronics

USA . 500 parts In-Stock

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500

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Cyclops Electronics Ltd (Excess)

UK . 271 parts In-Stock

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Resion (Excess)

USA . 18 parts In-Stock

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Overview

Enhance your electronic projects with the FZT855TA power BJT by Diodes Incorporated. Known for their top-quality components, Diodes Incorporated delivers reliable performance and durability. This NPN transistor is ideal for switching applications, providing seamless operation and efficiency. With a maximum collector-emitter voltage of 150V and a maximum operating temperature of 150°C, this transistor offers superior power dissipation capabilities. Upgrade your designs with the FZT855TA and experience the unmatched value and benefits it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good thermal conductivity and electrical insulation, making the transistor reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low noise.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications where only one transistor is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient response to control signals.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying manufacturing processes.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and easy soldering during PCB assembly.

Maximum Power Dissipation (Abs): 12.8 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures consistent and reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environments without compromising performance.

Maximum Collector-Emitter Voltage: 150 V

High collector-emitter voltage rating allows for usage in applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 5 A

High collector current rating enables the transistor to handle higher current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 90 MHz

High transition frequency ensures rapid response in switching applications, improving overall performance and efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT855TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT855TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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