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FZT851QTA

Diodes Incorporated

FZT851QTA by Diodes Incorporated

FZT851QTA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for power applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 130MHz. Suitable for surface mount designs with Gull Wing terminals in a small outline package.

Median Price

$1.542

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 362 parts In-Stock

1+ parts

$1.542

100+ parts

$0.895

1k+ parts

$0.584

10k+ parts

$0.579

362

$1.542

$0.895

$0.584

$0.579

Mouser Electronics

USA . 1,761 parts In-Stock

1+ parts

$1.650

100+ parts

$0.797

1k+ parts

$0.615

10k+ parts

$0.500

1,761

$1.650

$0.797

$0.615

$0.500

Newark

USA . 1,008 parts In-Stock

1+ parts

$1.890

100+ parts

$0.812

1k+ parts

$0.615

10k+ parts

-

1,008

$1.890

$0.812

$0.615

-

DigiKey

USA . 715 parts In-Stock

1+ parts

$1.930

100+ parts

$0.829

1k+ parts

$0.602

10k+ parts

$0.500

715

$1.930

$0.829

$0.602

$0.500

Verical

USA . 67,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.500

10k+ parts

-

67,000

-

-

$0.500

-

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.208

10k+ parts

$0.208

5,000

-

-

$0.208

$0.208

Element14

Singapore . 362 parts In-Stock

1+ parts

-

100+ parts

$0.935

1k+ parts

$0.608

10k+ parts

$0.602

362

-

$0.935

$0.608

$0.602

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.492

10k+ parts

-

32,000

-

-

$0.492

-

Rutronik

Germany . 14,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.475

10k+ parts

$0.401

14,000

-

-

$0.475

$0.401

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,265 parts In-Stock

1+ parts

$3.900

100+ parts

-

1k+ parts

-

10k+ parts

-

3,265

$3.900

-

-

-

Kepictronics

USA . 99,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99,000

-

-

-

-

Metaverse IC Inc.

Canada . 99,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99,000

-

-

-

-

Authorized Procurement Solutions

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60,000

-

-

-

-

GreenTree Electronics

Israel . 46,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

46,000

-

-

-

-

Lixinc

USA . 4,094 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,094

-

-

-

-

Northwest PG Solutions

USA . 1,464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,464

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.424

10k+ parts

-

1,000

-

-

$0.424

-

Continental Prestige Electronics

USA . 979 parts In-Stock

1+ parts

-

100+ parts

$0.790

1k+ parts

$0.468

10k+ parts

$0.454

979

-

$0.790

$0.468

$0.454

Native Components

USA . 563 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

563

-

-

-

-

Overview

Unleash the power of innovation with the FZT851QTA by Diodes Incorporated. Crafted with precision and reliability in mind, this Power Bipolar Junction Transistor (BJT) exemplifies the superior quality that Diodes Incorporated is renowned for. From automotive electronics to industrial applications, this NPN transistor offers unmatched performance and efficiency. Elevate your projects with the exceptional value and benefits that the FZT851QTA brings to the table. Experience the difference today and take your designs to new heights with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability and stable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile and suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 3 W

With a high power dissipation capability, this transistor can handle moderate to high power applications without overheating.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures reliable amplification of signals, making this transistor efficient in signal processing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating ensures compatibility with a wide range of circuits and provides robust protection against voltage spikes.

Maximum Collector Current (IC): 6 A

With a maximum collector current of 6 A, this transistor can handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 130 MHz

The high transition frequency enables this transistor to operate at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT851QTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT851QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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