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FZT851

Diodes Incorporated

FZT851 by Diodes Incorporated

FZT851 by Diodes Inc. is a NPN BJT with 60V VCEO, 6A IC, and 3W Ptot. Ideal for power applications in small outline packages, it has hFE of min. 100 and fT of 130MHz. Suitable for surface mount designs requiring high power dissipation and temperature resistance up to 150°C.

Median Price

$0.476

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,100 parts In-Stock

1+ parts

-

100+ parts

$0.516

1k+ parts

$0.449

10k+ parts

-

2,100

-

$0.516

$0.449

-

Element14

Singapore . 2,099 parts In-Stock

1+ parts

-

100+ parts

$0.437

1k+ parts

$0.381

10k+ parts

-

2,099

-

$0.437

$0.381

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

1+ parts

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100

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Prism Electronics

USA . 28 parts In-Stock

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28

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Bas Electronics GmbH & Co. KG

Germany . 16 parts In-Stock

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16

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Metaverse IC Inc.

Canada . 30,000 parts In-Stock

1+ parts

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30,000

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RC Electronics

USA . 20,700 parts In-Stock

1+ parts

-

100+ parts

$0.470

1k+ parts

$0.440

10k+ parts

$0.430

20,700

-

$0.470

$0.440

$0.430

Continental Prestige Electronics

USA . 6,866 parts In-Stock

1+ parts

-

100+ parts

$0.563

1k+ parts

$0.342

10k+ parts

$0.323

6,866

-

$0.563

$0.342

$0.323

Northwest PG Solutions

USA . 2,221 parts In-Stock

1+ parts

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2,221

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Standard Data Resources (Excess)

USA . 1,988 parts In-Stock

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1,988

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Native Components

USA . 608 parts In-Stock

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608

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Infinite Electronics LLP (Excess)

. 458 parts In-Stock

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458

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Perfect Parts

USA . 224 parts In-Stock

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224

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Cyclops Electronics Ltd (Excess)

UK . 100 parts In-Stock

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100

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Overview

Unlock the power of innovation with the FZT851 by Diodes Incorporated. Designed to deliver superior performance and reliability, this NPN Power Bipolar Junction Transistor is a game-changer in the world of electronics. Whether you're working on automotive applications, industrial controls, or consumer electronics, the FZT851 offers unmatched quality and precision. With a maximum collector-emitter voltage of 60V, a small outline package style, and a peak reflow temperature of 260°C, this transistor ensures optimal efficiency and durability in any project. Trust Diodes Incorporated to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, ideal for applications where weight and reliability are important factors.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other components in circuits, making it versatile for a wide range of applications.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle high power levels without overheating, ensuring long-term reliability in demanding operating conditions.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 indicates that the transistor can provide consistent and stable amplification of signals, making it suitable for applications where signal strength is critical.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60V allows the transistor to operate safely in circuits with varying voltage levels, making it versatile for different voltage requirements.

Maximum Collector Current (IC): 6 A

With a maximum collector current of 6A, this transistor can handle high current loads, making it suitable for power applications that require high current output.

Nominal Transition Frequency (fT): 130 MHz

The high nominal transition frequency of 130MHz indicates that the transistor can operate at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT851 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT851 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-614-3317, 5961016143317

NIIN

016143317

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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