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BUL57

STMicroelectronics

BUL57 by STMicroelectronics

STMicroelectronics BUL57 is a NPN Power BJT with VCEsat of 2V, hFE of 6, and IC of 8A. Ideal for switching applications, it has a max power dissipation of 85W at 150 °C. The transistor comes in a plastic package with through-hole terminals and can handle up to 400V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,444 parts In-Stock

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4,444

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Digiode

USA . 4,250 parts In-Stock

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4,250

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Anansix

USA . 1,415 parts In-Stock

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1,415

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ECAB

Sweden . 305 parts In-Stock

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305

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Lakeland Logistics Inc

USA . 8 parts In-Stock

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8

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Bristol Electronics

USA . 8 parts In-Stock

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8

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 476 parts In-Stock

1+ parts

$1.644

100+ parts

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$1.480

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476

$1.644

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$1.480

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MKK Technologies

India . 2,092 parts In-Stock

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$3.092

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2,092

$3.092

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DigiPath Technology Company

USA . 2,092 parts In-Stock

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$3.092

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$3.092

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Native Components

USA . 858 parts In-Stock

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$63.931

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$61.374

858

$63.931

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$61.374

Northwest PG Solutions

USA . 52 parts In-Stock

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$70.324

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52

$70.324

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Corphita

USA . 3,736 parts In-Stock

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3,736

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Parana Technologies

USA . 1,669 parts In-Stock

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$1.966

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1,669

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$1.966

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Overview

Elevate your power management solutions with the BUL57 from STMicroelectronics. This high-quality Power Bipolar Junction Transistor (BJT) offers reliable switching performance in a convenient single configuration. Whether you're designing industrial equipment, automotive systems, or consumer electronics, this NPN transistor delivers exceptional value and efficiency. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 85W, the BUL57 is the perfect choice for your next project. Upgrade to STMicroelectronics for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplifies circuit design and enables easy integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling electrical circuits.

Maximum VCEsat: 2 V

Low VCEsat value signifies reduced power losses and improved efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it convenient for hand soldering and PCB assembly.

Maximum Power Dissipation (Abs): 75 W

High power dissipation capability ensures reliable operation under varying load conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount design enables secure attachment to heat sinks for effective heat dissipation.

Maximum Power Dissipation Ambient: 85 W

Ability to dissipate 85 W of power under ambient conditions enhances reliability and thermal performance.

Minimum DC Current Gain (hFE): 6

A minimum hFE of 6 ensures stable and consistent amplification in circuit applications.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance of 150 °C allows for reliable operation in various thermal environments.

Maximum Collector-Emitter Voltage: 400 V

High VCE rating of 400 V provides flexibility in voltage handling capabilities for different circuit requirements.

Transistor Element Material: SILICON

Silicon material offers superior performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 8 A

High IC rating of 8 A ensures compatibility with high current applications without the risk of damage.

Maximum Turn Off Time (toff): 2710 ns

Fast turn-off time of 2710 ns enhances efficiency in switching operations, reducing power losses.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and resistance to oxidation, improving overall reliability.

Terminal Position: SINGLE

Single terminal position simplifies connection and ensures proper alignment during installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL57 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

85 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2710 ns

Maximum VCEsat:

2 V

Trade Compliance

BUL57 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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