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MJ15003

Onsemi

MJ15003 by Onsemi

The Onsemi MJ15003 is a NPN BJT transistor with 250W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 140V and can handle up to 20A collector current. With a min DC current gain of 25 and operating temperature of 200°C, it offers reliable performance in various electronic circuits.

Median Price

$7.480

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

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Element14

Singapore . 717 parts In-Stock

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$3.257

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$2.554

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$2.073

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717

$3.257

$2.554

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Farnell

UK . 717 parts In-Stock

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$7.480

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$4.161

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$2.336

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717

$7.480

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DigiKey

USA . 294 parts In-Stock

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$9.690

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$4.415

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TME

Poland . 877 parts In-Stock

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$2.290

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$1.640

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Digiode

USA . 799 parts In-Stock

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$3.094

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DF Sales Co.

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Nova Conductors

Japan . 48 parts In-Stock

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Ace Electronics

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DigiKey Marketplace

USA . 80 parts In-Stock

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Forefront Electronics and Design

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$7.350

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American Microsemiconductor Inc.

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Bristol Electronics

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Tech-Mark Corp

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Chip Stock

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Vyrian

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Micros

Poland . 195 parts In-Stock

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$1.612

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$1.583

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Partservice

France . 190 parts In-Stock

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$1.614

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$1.584

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$1.584

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$1.584

Micros sp.j. W. Kędra i J. Lic

Poland . 139 parts In-Stock

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$1.729

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$1.697

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$1.697

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$1.697

R&J Components

USA . 77 parts In-Stock

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Jameco Electronics

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Lakeview Electronics

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MRC Electronics

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ABC Electronics Ltd.

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MISTER SPROCKETS

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Cyclops Electronics Ltd

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Fibra_Brandt Electronic GMBH

Germany . 24 parts In-Stock

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Pegasus Components GmbH

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Manotoh

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Electronic Expediters

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Sunrise Surplus Inc.

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Century Electronics Ltd.

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J & M Industries LLC

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Corel Iberica Componentes, S.L.

Spain . 4 parts In-Stock

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Donberg Electronics Ltd

Ireland . 2 parts In-Stock

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First Choice Components Inc.

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Manoshevitz Elec. Sales

Israel . 1 parts In-Stock

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Distributors (Availability)

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Benley Electronics

USA . 9 parts In-Stock

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$1.000

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$1.000

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Corohmni

South Africa . 409 parts In-Stock

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$1.589

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409

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Component Stockers USA

USA . 360 parts In-Stock

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$2.250

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$1.610

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360

$2.250

$1.610

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Semicontronic

India . 587 parts In-Stock

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$2.770

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$2.701

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$2.687

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587

$2.770

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$2.687

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Corphita

USA . 2,113 parts In-Stock

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$2.931

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Netroflash

USA . 100 parts In-Stock

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$5.130

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Continental Prestige Electronics

USA . 2,090 parts In-Stock

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$5.860

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$3.260

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$1.830

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2,090

$5.860

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$1.830

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QUARKTWIN TECHNOLOGY LTD

USA . 25,830 parts In-Stock

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,148 parts In-Stock

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TANS Electronics

Latvia . 4,963 parts In-Stock

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Argo Parts USA

USA . 4,856 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

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SupplyDigital Components

Austria . 3,048 parts In-Stock

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Assy Fe

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Kulean Microsystems

USA . 1,985 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 1,335 parts In-Stock

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Supply Digital

USA . 661 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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Kepictronics

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A-Plus Industry Inc.

USA . 1 parts In-Stock

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Overview

Unlock the power of the MJ15003 by Onsemi, a top-of-the-line Power BJT transistor that guarantees unparalleled quality and reliability. Manufactured by Onsemi, a leader in the industry, this NPN transistor is perfect for amplifier applications. Its metal package body material and high power dissipation of 250 W ensure exceptional performance. With a maximum collector-emitter voltage of 140 V and a maximum collector current of 20 A, this transistor offers superior value and benefits for your projects. Trust Onsemi and elevate your designs with the MJ15003.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and good thermal conductivity, ensuring efficient heat dissipation during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this product versatile for various applications.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability allows the transistor to handle large currents and voltages without overheating, ensuring reliable performance.

Maximum Operating Temperature: 200 °C

Wide operating temperature range enables this transistor to function effectively in various environmental conditions.

Maximum Collector-Emitter Voltage: 140 V

High collector-emitter voltage rating provides safety margin for the transistor to withstand voltage spikes and surges.

Maximum Collector Current (IC): 20 A

High collector current rating allows the transistor to handle large currents, suitable for power amplifier applications.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency indicates fast switching speed, making this transistor suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ15003 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ15003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-289-4238, 5961012894238

NIIN

012894238

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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