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MJ15022G

Onsemi

MJ15022G by Onsemi

The Onsemi MJ15022G is a NPN BJT transistor with 200V VCEO and 16A IC, ideal for amplifier applications. With a max power dissipation of 250W, it operates up to 200°C. Featuring a single configuration in a round package style, it has a min hFE of 5 and fT of 4MHz.

Median Price

$7.935

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS Americas

USA . 7 parts In-Stock

1+ parts

$7.560

100+ parts

$6.430

1k+ parts

-

10k+ parts

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7

$7.560

$6.430

-

-

Chip1Stop

Japan . 135 parts In-Stock

1+ parts

$8.310

100+ parts

$5.520

1k+ parts

-

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-

135

$8.310

$5.520

-

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Newark

USA . 74 parts In-Stock

1+ parts

$8.730

100+ parts

$4.210

1k+ parts

-

10k+ parts

-

74

$8.730

$4.210

-

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DigiKey

USA . 362 parts In-Stock

1+ parts

$9.510

100+ parts

$4.841

1k+ parts

$4.308

10k+ parts

-

362

$9.510

$4.841

$4.308

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Mouser Electronics

USA . 231 parts In-Stock

1+ parts

$9.510

100+ parts

-

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-

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231

$9.510

-

-

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Element14

Singapore . 132 parts In-Stock

1+ parts

$11.290

100+ parts

$6.580

1k+ parts

$5.830

10k+ parts

-

132

$11.290

$6.580

$5.830

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Rochester

USA . 23,198 parts In-Stock

1+ parts

-

100+ parts

$4.070

1k+ parts

$3.640

10k+ parts

$3.420

23,198

-

$4.070

$3.640

$3.420

Verical

USA . 13,056 parts In-Stock

1+ parts

-

100+ parts

$5.088

1k+ parts

$4.550

10k+ parts

$4.275

13,056

-

$5.088

$4.550

$4.275

Arrow

USA . 400 parts In-Stock

1+ parts

-

100+ parts

$4.130

1k+ parts

-

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400

-

$4.130

-

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Master Electronics

USA . 138 parts In-Stock

1+ parts

-

100+ parts

$4.150

1k+ parts

$4.090

10k+ parts

$4.070

138

-

$4.150

$4.090

$4.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,234 parts In-Stock

1+ parts

$4.294

100+ parts

-

1k+ parts

-

10k+ parts

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1,234

$4.294

-

-

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Nova Conductors

Japan . 97 parts In-Stock

1+ parts

$5.178

100+ parts

-

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97

$5.178

-

-

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TME

Poland . 121 parts In-Stock

1+ parts

$7.700

100+ parts

$5.990

1k+ parts

-

10k+ parts

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121

$7.700

$5.990

-

-

Galco

USA . 2 parts In-Stock

1+ parts

$13.630

100+ parts

-

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-

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2

$13.630

-

-

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Vyrian

USA . 9,553 parts In-Stock

1+ parts

-

100+ parts

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9,553

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NAC Semi

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$10.000

1k+ parts

$9.000

10k+ parts

-

600

-

$10.000

$9.000

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Bristol Electronics

USA . 350 parts In-Stock

1+ parts

-

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350

-

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IBS Electronics

USA . 259 parts In-Stock

1+ parts

-

100+ parts

$5.582

1k+ parts

$5.498

10k+ parts

$5.442

259

-

$5.582

$5.498

$5.442

Chip Stock

USA . 135 parts In-Stock

1+ parts

-

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135

-

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Amar Radio Corporation

India . 10 parts In-Stock

1+ parts

-

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10

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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-

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,194 parts In-Stock

1+ parts

$0.628

100+ parts

-

1k+ parts

-

10k+ parts

-

4,194

$0.628

-

-

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Ampacity Inc.

Singapore . 3,206 parts In-Stock

1+ parts

$3.640

100+ parts

-

1k+ parts

-

10k+ parts

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3,206

$3.640

-

-

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Semicontronic

India . 3,024 parts In-Stock

1+ parts

$3.640

100+ parts

$3.549

1k+ parts

$3.531

10k+ parts

-

3,024

$3.640

$3.549

$3.531

-

Corphita

USA . 1,989 parts In-Stock

1+ parts

$4.068

100+ parts

-

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-

10k+ parts

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1,989

$4.068

-

-

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Corohmni

South Africa . 472 parts In-Stock

1+ parts

$4.280

100+ parts

-

1k+ parts

-

10k+ parts

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472

$4.280

-

-

-

Component Stockers USA

USA . 24,389 parts In-Stock

1+ parts

$4.620

100+ parts

$4.260

1k+ parts

$3.930

10k+ parts

$3.930

24,389

$4.620

$4.260

$3.930

$3.930

Continental Prestige Electronics

USA . 297 parts In-Stock

1+ parts

$5.177

100+ parts

-

1k+ parts

-

10k+ parts

$5.073

297

$5.177

-

-

$5.073

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$5.178

100+ parts

-

1k+ parts

$4.919

10k+ parts

$4.816

1,000

$5.178

-

$4.919

$4.816

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$6.908

100+ parts

$6.355

1k+ parts

$5.955

10k+ parts

-

1,000

$6.908

$6.355

$5.955

-

Allen Electronics Distributors

USA . 548 parts In-Stock

1+ parts

$7.580

100+ parts

$6.380

1k+ parts

-

10k+ parts

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548

$7.580

$6.380

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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QUARKTWIN TECHNOLOGY LTD

USA . 9,895 parts In-Stock

1+ parts

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9,895

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-

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SupplyDigital Components

Austria . 7,110 parts In-Stock

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7,110

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Kulean Microsystems

USA . 6,928 parts In-Stock

1+ parts

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6,928

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-

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A-Z Elektronik GmbH

Germany . 6,518 parts In-Stock

1+ parts

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100+ parts

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6,518

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Problanco Electronics

Mexico . 6,082 parts In-Stock

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6,082

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Kepictronics

USA . 2,998 parts In-Stock

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2,998

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Perfect Parts

USA . 2,555 parts In-Stock

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2,555

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Argo Parts USA

USA . 2,089 parts In-Stock

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2,089

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TANS Electronics

Latvia . 1,967 parts In-Stock

1+ parts

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1,967

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UHIMA Technologies

Türkiye . 237 parts In-Stock

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237

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Overview

Enhance your amplifier projects with the MJ15022G power bipolar transistor from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. The NPN configuration and 200V maximum collector-emitter voltage make this transistor ideal for a wide range of amplifier applications. With a maximum power dissipation of 250W and a minimum DC current gain of 5, the MJ15022G offers unmatched performance and efficiency. Upgrade your projects today with this high-quality transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: METAL

Provides excellent heat dissipation, making it suitable for high-power applications.

Polarity or Channel Type: NPN

Offers high gain and low signal distortion, ideal for amplifier circuits.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in implementation.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals accurately and efficiently.

Package Shape: ROUND

Facilitates easy mounting and integration into various systems.

Terminal Form: PIN/PEG

Allows for easy connection and installation in circuit boards.

No. of Terminals: 2

Simple design with minimal connections for uncomplicated setups.

Maximum Power Dissipation (Abs): 250 W

Capable of handling high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting on surfaces for stability in operation.

Minimum DC Current Gain (hFE): 5

Provides reliable and consistent amplification of input signals.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures for extended periods of operation.

Maximum Collector-Emitter Voltage: 200 V

Handles high voltage levels without breakdown, ensuring reliability.

Transistor Element Material: SILICON

Offers high efficiency and performance in a compact form factor.

Maximum Collector Current (IC): 16 A

Capable of handling high current loads for demanding applications.

Terminal Finish: MATTE TIN

Ensures good contact and conductivity for reliable circuit operation.

Terminal Position: BOTTOM

Facilitates easy installation and connection in various setups.

Case Connection: COLLECTOR

Simplifies circuit design and layout for efficient operation.

Nominal Transition Frequency (fT): 4 MHz

Enables fast response times and high-speed switching capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ15022G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ15022G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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