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TIP132G

Onsemi

TIP132G by Onsemi

TIP132G by Onsemi is a NPN Darlington BJT with 100V VCEO, 8A IC, and 70W Ptot. Ideal for amplifier applications, it has hFE of 1000 and can operate up to 150 °C. Package style is flange mount with through-hole terminals.

Median Price

$0.524

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 47,107 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.428

10k+ parts

$0.381

47,107

-

$0.515

$0.428

$0.381

Verical

USA . 42,851 parts In-Stock

1+ parts

-

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-

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$0.534

10k+ parts

$0.476

42,851

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-

$0.534

$0.476

Distributors (In-Stock)

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Digiode

USA . 2,092 parts In-Stock

1+ parts

$0.401

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2,092

$0.401

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Chip Stock

USA . 7,730 parts In-Stock

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7,730

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Vyrian

USA . 6,543 parts In-Stock

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6,543

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Distributors (Availability)

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Corphita

USA . 619 parts In-Stock

1+ parts

$0.380

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-

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619

$0.380

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Corohmni

South Africa . 295 parts In-Stock

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$0.422

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295

$0.422

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AZTECH Wire

Italy . 971 parts In-Stock

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$20.690

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971

$20.690

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Continental Prestige Electronics

USA . 51,247 parts In-Stock

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$0.402

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51,247

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$0.402

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QUARKTWIN TECHNOLOGY LTD

USA . 28,211 parts In-Stock

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28,211

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SupplyDigital Components

Austria . 6,187 parts In-Stock

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Problanco Electronics

Mexico . 910 parts In-Stock

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910

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ChipstoGo Electronic ltd

UK . 570 parts In-Stock

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570

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Kulean Microsystems

USA . 399 parts In-Stock

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399

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TANS Electronics

Latvia . 394 parts In-Stock

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394

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UHIMA Technologies

Türkiye . 125 parts In-Stock

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Overview

Unlock the power of innovation with the TIP132G by Onsemi, a top-of-the-line Power Bipolar Junction Transistor. Manufactured with precision and expertise by Onsemi, this NPN Darlington transistor is perfect for applications in amplifiers, offering a maximum power dissipation of 70W and a minimum DC current gain of 1000. With a maximum collector-emitter voltage of 100V and a maximum collector current of 8A, this product provides unmatched performance and reliability. Elevate your projects to new heights with the TIP132G, a game-changer in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering versatility in circuit design.

Configuration: DARLINGTON

Darlington configuration provides high current gain and can be used in high-power applications such as amplifiers.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation: 70 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 100 V

With a high collector-emitter voltage rating, this transistor can be used in a wide range of voltage applications.

Maximum Collector Current (IC): 8 A

High collector current rating makes this transistor suitable for applications requiring high current flow.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures efficient amplification of input signals, making it ideal for amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP132G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TIP132G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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