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BDW93C-S

Bourns

BDW93C-S by Bourns

The Bourns BDW93C-S is a NPN Darlington transistor with hFE of 100, IC of 12A, and VCE of 100V. Ideal for power applications in temperatures up to 150°C. Suitable for use in various electronic circuits requiring high current amplification.

Median Price

$1.401

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 500 parts In-Stock

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$1.401

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$1.387

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500

$1.401

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VNN

France . 6,218 parts In-Stock

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Vyrian

USA . 4,993 parts In-Stock

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4,993

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Euro-Tech

UK . 219 parts In-Stock

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Aztec Data Supply Inc.

USA . 266 parts In-Stock

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$0.595

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Corohmni

South Africa . 137 parts In-Stock

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$0.876

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137

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Semicontronic

India . 220 parts In-Stock

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$1.190

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$1.160

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$1.154

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220

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$1.154

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Ampacity Inc.

Singapore . 30 parts In-Stock

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$1.190

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.401

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$1.387

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$1.331

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500

$1.401

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$1.331

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AZTECH Wire

Italy . 816 parts In-Stock

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$18.271

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816

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Argo Parts USA

USA . 540 parts In-Stock

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Bastille Electronics

Australia . 42 parts In-Stock

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Continental Prestige Electronics

USA . 27 parts In-Stock

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Overview

Enhance your electronic projects with the BDW93C-S by Bourns, a high-quality Power Bipolar Junction Transistor that delivers reliable performance and efficiency. Bourns, a trusted manufacturer known for its innovative technology, brings you a versatile product that is ideal for a wide range of applications. With features like a minimum DC current gain of 100 and a maximum collector-emitter voltage of 100V, this NPN transistor offers exceptional value and benefits to customers looking for a durable and cost-effective solution. Upgrade your designs with the BDW93C-S and experience superior quality that meets your needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type:

NPN - Offers versatility in circuit design and compatibility with different components, enhancing the flexibility of the transistor.

Configuration:

DARLINGTON - Allows for high current gain and improved performance in demanding applications, making it a powerful choice for power systems.

Package Shape:

RECTANGULAR - Facilitates easy installation and integration into circuit boards, streamlining the manufacturing process.

Terminal Form:

THROUGH-HOLE - Ensures secure connections and facilitates soldering, making it easier to handle during assembly.

No. of Terminals:

3 - Simplifies circuit design and reduces complexity, making it an efficient choice for applications with limited space.

Package Style (Meter):

FLANGE MOUNT - Enables easy mounting and secure placement in systems, enhancing the stability and longevity of the transistor.

Minimum DC Current Gain (hFE):

100 - Ensures consistent and reliable amplification of signals, making it a robust choice for signal processing applications.

Maximum Operating Temperature:

150 °C - Allows for operation in a wide range of environments, ensuring stability and performance in varying conditions.

Maximum Collector-Emitter Voltage:

100 V - Offers high voltage tolerance for improved reliability and safety in high-power applications.

Transistor Element Material:

SILICON - Provides high efficiency and performance, making it a durable and long-lasting choice for power systems.

Maximum Collector Current (IC):

12 A - Handles high current loads with ease, making it suitable for demanding power applications.

Terminal Finish:

TIN SILVER COPPER - Ensures reliable connections and minimizes signal loss, enhancing the overall performance of the transistor.

Terminal Position:

SINGLE - Simplifies installation and reduces the risk of errors, making it user-friendly and efficient for assembly.

Case Connection:

COLLECTOR - Facilitates effective heat dissipation and thermal management, ensuring the longevity and stability of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW93C-S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Bourns

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

BDW93C-S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Bourns

Bourns, Inc. is an American electronics company that develops, manufactures and supplies electronic components for a variety of industries including automotive, industrial, instrumentation, medical electronics, consumer equipment and portable electronics. Established in Altadena, California in 1947 by Marlan and Rosemary Bourns, graduates of the University of Michigan, the company was founded to develop and sell electronic components and sensors to the aerospace industry. Bourns has 15 manufacturing facilities around the world and has continued growing through the development of new products and technologies as well as through acquisitions. The company has approximately 9000 employees worldwide.

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