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BDW93CFI

STMicroelectronics

BDW93CFI by STMicroelectronics

STMicroelectronics BDW93CFI is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 3V, hFE of 100, and IC of 12A. With a package style of flange mount and max power dissipation of 40W, it operates at temperatures up to 150°C.

Median Price

$0.620

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.620

100+ parts

$0.589

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$0.589

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100

$0.620

$0.589

$0.589

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Distributors (In-Stock)

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Digiode

USA . 2,263 parts In-Stock

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$0.589

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2,263

$0.589

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Vyrian

USA . 7,575 parts In-Stock

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7,575

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VNN

France . 5,373 parts In-Stock

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Anansix

USA . 795 parts In-Stock

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795

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Holdelec - ElecDif-Pro

France . 288 parts In-Stock

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288

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ACDS - Activité Composants Distribution Service

France . 288 parts In-Stock

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288

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Tectiva GmbH

Germany . 50 parts In-Stock

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50

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Pegasus Components GmbH

Germany . 42 parts In-Stock

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42

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ECAB

Sweden . 19 parts In-Stock

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GES GmbH

Germany . 15 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 100 parts In-Stock

1+ parts

$0.530

100+ parts

-

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100

$0.530

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Semicontronic

India . 100 parts In-Stock

1+ parts

$0.530

100+ parts

$0.517

1k+ parts

$0.514

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100

$0.530

$0.517

$0.514

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Corphita

USA . 1,184 parts In-Stock

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$0.558

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$0.558

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.620

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$0.589

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$0.589

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100

$0.620

$0.589

$0.589

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IDEA Electronic Components Group

UK . 991 parts In-Stock

1+ parts

$0.673

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$0.606

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991

$0.673

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$0.606

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Corohmni

South Africa . 81 parts In-Stock

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$0.701

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81

$0.701

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Aztec Data Supply Inc.

USA . 122 parts In-Stock

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$1.229

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$1.229

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MKK Technologies

India . 136 parts In-Stock

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$1.266

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$1.266

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DigiPath Technology Company

USA . 136 parts In-Stock

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$1.266

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$1.266

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AZTECH Wire

Italy . 253 parts In-Stock

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$9.841

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Argo Parts USA

USA . 3,124 parts In-Stock

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Continental Prestige Electronics

USA . 2,135 parts In-Stock

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Kepictronics

USA . 730 parts In-Stock

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Assy Fe

Spain . 41 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Parana Technologies

USA . 11 parts In-Stock

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$0.805

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11

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$0.805

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Overview

Discover the BDW93CFI by STMicroelectronics, a high-quality Power Bipolar Junction Transistor that offers exceptional performance in switching applications. With its NPN polarity and Darlington configuration, this transistor provides reliable operation with a built-in diode and resistor for added convenience. Boasting a maximum power dissipation of 40 W and a maximum collector current of 12 A, the BDW93CFI is designed to meet your power needs efficiently. Trust in the expertise of STMicroelectronics to deliver superior components for your electronic projects. Elevate your designs with the BDW93CFI and experience the reliability and value it brings to your applications.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and ensures reliable performance.

Polarity or Channel Type:

NPN - NPN transistors are commonly used in amplification and switching applications.

Configuration:

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR - This configuration simplifies circuit design and saves space.

Transistor Application:

SWITCHING - Ideal for applications requiring fast switching speeds and high efficiency.

Maximum VCEsat:

3 V - Low VCEsat minimizes power loss and improves efficiency of the transistor.

Package Shape:

RECTANGULAR - Rectangular shape makes it easy to mount and integrate into existing circuit layouts.

Terminal Form:

THROUGH-HOLE - Suitable for through-hole soldering, providing a strong and reliable connection.

No. of Terminals:

3 - Simple and straightforward 3-terminal design for easy integration into circuits.

Maximum Power Dissipation (Abs):

40 W - High power dissipation capability allows for handling of high current loads.

Package Style (Meter):

FLANGE MOUNT - Flange mount package style provides stability and easy mounting on heatsinks.

Maximum Power Dissipation Ambient:

40 W - Can reliably dissipate power in various ambient conditions.

Minimum DC Current Gain (hFE):

100 - High DC current gain ensures stable and predictable transistor behavior.

Maximum Operating Temperature:

150 °C - High operating temperature range allows for use in a variety of environments.

Maximum Collector-Emitter Voltage:

100 V - Capable of handling high voltage applications with ease.

Transistor Element Material:

SILICON - Silicon transistors offer high performance and reliability.

Maximum Collector Current (IC):

12 A - High collector current rating allows for handling of high current loads.

Terminal Finish:

MATTE TIN - Matte tin finish provides excellent solderability and corrosion resistance.

Terminal Position:

SINGLE - Single terminal position simplifies connection and integration into circuits.

Case Connection:

ISOLATED - Isolated case connection ensures safety and prevents electrical interference.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW93CFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

40 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

BDW93CFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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