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BDW93CTU

Onsemi

BDW93CTU by Onsemi

BDW93CTU by Onsemi is a NPN Power BJT with 100V VCEO, 12A IC, and 80W Ptot. Ideal for switching applications, it features a Darlington configuration in a plastic package with matte tin finish. Operating up to 150°C, this transistor is designed for high-power requirements in various electronic circuits.

Median Price

$0.462

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.504

100+ parts

$0.478

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$0.478

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50

$0.504

$0.478

$0.478

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Flip Electronics (Authorized)

USA . 915 parts In-Stock

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915

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RS (Exports)

UK . 640 parts In-Stock

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$0.421

1k+ parts

$0.306

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640

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$0.421

$0.306

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Distributors (In-Stock)

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Digiode

USA . 1,627 parts In-Stock

1+ parts

$0.479

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1,627

$0.479

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Nova Conductors

Japan . 700 parts In-Stock

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$0.559

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700

$0.559

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TME

Poland . 439 parts In-Stock

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$0.800

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$0.480

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$0.430

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439

$0.800

$0.480

$0.430

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Chip Stock

USA . 14,326 parts In-Stock

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VNN

France . 2,571 parts In-Stock

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Flip Electronics

USA . 915 parts In-Stock

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915

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Cyclops Electronics Ltd

UK . 247 parts In-Stock

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247

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Vyrian

USA . 65 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 284 parts In-Stock

1+ parts

$0.428

100+ parts

-

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284

$0.428

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Semicontronic

India . 98 parts In-Stock

1+ parts

$0.428

100+ parts

$0.417

1k+ parts

$0.415

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98

$0.428

$0.417

$0.415

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Corphita

USA . 1,613 parts In-Stock

1+ parts

$0.454

100+ parts

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1,613

$0.454

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.504

100+ parts

$0.478

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$0.478

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50

$0.504

$0.478

$0.478

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Corohmni

South Africa . 500 parts In-Stock

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$0.504

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500

$0.504

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Argo Parts USA

USA . 2,730 parts In-Stock

1+ parts

$0.559

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$0.542

2,730

$0.559

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-

$0.542

Continental Prestige Electronics

USA . 1,548 parts In-Stock

1+ parts

$0.559

100+ parts

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$0.548

1,548

$0.559

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-

$0.548

Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$1.724

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1,000

$1.724

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AZTECH Wire

Italy . 397 parts In-Stock

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$19.352

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397

$19.352

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S.R.D Solutions

India . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,384 parts In-Stock

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23,384

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Lixinc

USA . 11,752 parts In-Stock

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TANS Electronics

Latvia . 8,246 parts In-Stock

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SupplyDigital Components

Austria . 8,202 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,670 parts In-Stock

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Problanco Electronics

Mexico . 5,296 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,113 parts In-Stock

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Microchip USA

USA . 2,811 parts In-Stock

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Supply Digital

USA . 2,084 parts In-Stock

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2,084

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 1,691 parts In-Stock

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1,691

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Kulean Microsystems

USA . 1,075 parts In-Stock

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1,075

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Netroflash

USA . 500 parts In-Stock

1+ parts

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100+ parts

$0.548

1k+ parts

$0.531

10k+ parts

$0.520

500

-

$0.548

$0.531

$0.520

UHIMA Technologies

Türkiye . 366 parts In-Stock

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366

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ChipstoGo Electronic ltd

UK . 247 parts In-Stock

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247

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Overview

Unleash the power of innovation with the BDW93CTU by Onsemi, a top-quality Power Bipolar Junction Transistor designed for high-performance switching applications. Manufactured by industry leader Onsemi, this NPN transistor features a Darlington configuration with a built-in diode, ensuring optimal efficiency and reliability. With a maximum power dissipation of 80W and a maximum collector current of 12A, this transistor offers unmatched performance in a compact rectangular package. Elevate your projects to new heights with the BDW93CTU, where quality meets innovation.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

NPN - NPN transistors are commonly used in switching applications due to their high efficiency and fast response times.

Configuration:

DARLINGTON WITH BUILT-IN DIODE - The Darlington configuration provides high current gain and the built-in diode protects the transistor from back EMF, making it versatile for different circuit designs.

Transistor Application:

SWITCHING - Designed specifically for switching functions, this transistor can rapidly alternate between on and off states without overheating.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy integration into circuit boards, saving space and simplifying the overall design.

Terminal Form:

THROUGH-HOLE - Through-hole terminals provide a secure connection to the circuit board, ensuring stable performance in various operating conditions.

No. of Elements:

1 - With a single element, this transistor is straightforward to use and offers consistent performance.

No. of Terminals:

3 - The three terminals provide convenient connection points for input, output, and control signals, enabling seamless integration into circuit designs.

Maximum Power Dissipation (Abs):

80 W - With a high power dissipation rating, this transistor can handle heavy loads and operate reliably in demanding environments.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style ensures secure mounting and efficient heat dissipation, enhancing the transistor's overall reliability and longevity.

Minimum DC Current Gain (hFE):

100 - A high minimum DC current gain ensures consistent and stable amplification, making this transistor suitable for precision applications.

Maximum Operating Temperature:

150 °C - With a high operating temperature range, this transistor can withstand elevated temperatures without compromising performance or reliability.

Maximum Collector-Emitter Voltage:

100 V - The high collector-emitter voltage rating allows this transistor to handle high voltages safely, expanding its usability in various voltage-driven applications.

Transistor Element Material:

SILICON - Silicon is a robust and reliable material for transistor elements, ensuring long-term performance and durability.

Maximum Collector Current (IC):

12 A - The high maximum collector current rating enables this transistor to handle large current loads, making it suitable for high-power applications.

Terminal Finish:

MATTE TIN - The matte tin terminal finish offers corrosion resistance and optimal solderability, ensuring a reliable electrical connection.

Terminal Position:

SINGLE - The single terminal position simplifies installation and connection processes, streamlining the overall circuit design and reducing potential errors.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW93CTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BDW93CTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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