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TIP3055G

Onsemi

TIP3055G by Onsemi

TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.

Median Price

$2.670

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.741

100+ parts

$1.654

1k+ parts

$1.654

10k+ parts

-

1,000

$1.741

$1.654

$1.654

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Distrelec

Netherlands . 34 parts In-Stock

1+ parts

$2.580

100+ parts

$2.330

1k+ parts

$1.820

10k+ parts

$1.320

34

$2.580

$2.330

$1.820

$1.320

Farnell

UK . 1,498 parts In-Stock

1+ parts

$2.670

100+ parts

$1.460

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$1.070

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1,498

$2.670

$1.460

$1.070

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Newark

USA . 910 parts In-Stock

1+ parts

$3.290

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$1.580

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910

$3.290

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$1.580

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Mouser Electronics

USA . 541 parts In-Stock

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$3.610

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541

$3.610

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DigiKey

USA . 372 parts In-Stock

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$4.170

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$2.303

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$1.586

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$1.435

372

$4.170

$2.303

$1.586

$1.435

Element14

Singapore . 1,475 parts In-Stock

1+ parts

$4.480

100+ parts

$1.860

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$1.740

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1,475

$4.480

$1.860

$1.740

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Master Electronics

USA . 719 parts In-Stock

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$2.500

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$1.950

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$1.520

719

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$2.500

$1.950

$1.520

Verical

USA . 690 parts In-Stock

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$2.941

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$2.294

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690

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$2.941

$2.294

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EBV Elektronik

Germany . 540 parts In-Stock

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Arrow

USA . 510 parts In-Stock

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$1.644

1k+ parts

$1.107

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$1.027

510

-

$1.644

$1.107

$1.027

Rochester

USA . 39 parts In-Stock

1+ parts

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$1.420

1k+ parts

$1.180

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$1.050

39

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$1.050

Flip Electronics (Authorized)

USA . 24 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,113 parts In-Stock

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$0.697

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$0.697

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Nova Conductors

Japan . 500 parts In-Stock

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$1.690

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500

$1.690

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TME

Poland . 326 parts In-Stock

1+ parts

$3.130

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$1.760

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326

$3.130

$1.760

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Electro Sonic

Canada . 510 parts In-Stock

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100+ parts

$1.310

1k+ parts

$1.160

10k+ parts

$1.040

510

-

$1.310

$1.160

$1.040

NAC Semi

USA . 420 parts In-Stock

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$5.860

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$5.330

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420

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$5.860

$5.330

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Chip Stock

USA . 205 parts In-Stock

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Vyrian

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144

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IBS Electronics

USA . 119 parts In-Stock

1+ parts

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100+ parts

$1.753

1k+ parts

$1.557

10k+ parts

$1.403

119

-

$1.753

$1.557

$1.403

Flip Electronics

USA . 24 parts In-Stock

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North Shore Components

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Elcom Components

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Semi Source

USA . 10 parts In-Stock

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Jameco Electronics

USA . 8 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 282 parts In-Stock

1+ parts

$0.660

100+ parts

$0.644

1k+ parts

$0.640

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282

$0.660

$0.644

$0.640

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Ampacity Inc.

Singapore . 23 parts In-Stock

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$0.660

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23

$0.660

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Corphita

USA . 1,646 parts In-Stock

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$0.661

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1,646

$0.661

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Corohmni

South Africa . 248 parts In-Stock

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$0.749

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248

$0.749

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Aztec Data Supply Inc.

USA . 5,539 parts In-Stock

1+ parts

$0.894

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5,539

$0.894

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Argo Parts USA

USA . 1,857 parts In-Stock

1+ parts

$1.377

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1,857

$1.377

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.656

100+ parts

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1k+ parts

$1.590

10k+ parts

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2,000

$1.656

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$1.590

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.741

100+ parts

$1.654

1k+ parts

$1.654

10k+ parts

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1,000

$1.741

$1.654

$1.654

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Component Stockers USA

USA . 1,571 parts In-Stock

1+ parts

$1.930

100+ parts

$1.470

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1,571

$1.930

$1.470

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Continental Prestige Electronics

USA . 52 parts In-Stock

1+ parts

$2.360

100+ parts

$1.230

1k+ parts

$1.060

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52

$2.360

$1.230

$1.060

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QUARKTWIN TECHNOLOGY LTD

USA . 20,395 parts In-Stock

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20,395

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Problanco Electronics

Mexico . 7,007 parts In-Stock

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SupplyDigital Components

Austria . 3,538 parts In-Stock

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TANS Electronics

Latvia . 2,358 parts In-Stock

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Kulean Microsystems

USA . 2,310 parts In-Stock

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Perfect Parts

USA . 2,053 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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969

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

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900

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Eastek

USA . 540 parts In-Stock

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540

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Authorized Procurement Solutions

USA . 540 parts In-Stock

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540

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GreenTree Electronics

Israel . 30 parts In-Stock

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30

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Overview

Unleash the power of innovation with the TIP3055G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability with their Power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers a maximum collector current of 15A and a maximum power dissipation of 90W, providing efficient and effective performance. Whether you're designing circuits for industrial automation or power supplies, the TIP3055G is the perfect choice for your next project. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into existing circuit designs and compatibility with other components.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable performance and efficient switching capabilities.

Maximum Power Dissipation (Abs): 90 W

With a high maximum power dissipation, this transistor can handle demanding applications and ensure reliable operation.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage allows for versatility in circuit design and compatibility with a wide range of applications.

Maximum Collector Current (IC): 15 A

With a high maximum collector current, this transistor can handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 2.5 MHz

The high nominal transition frequency ensures fast switching speeds and optimal performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP3055G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP3055G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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