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BDW93CFTU

Fairchild Semiconductor

BDW93CFTU by Fairchild Semiconductor

Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.

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Overview

Unlock the power of innovation with the Fairchild Semiconductor BDW93CFTU Power Bipolar Junction Transistor. Designed with quality and precision in mind, this NPN transistor features a Darlington configuration with a built-in diode, making it ideal for switching applications. With a maximum power dissipation of 30W and a maximum collector current of 12A, this product offers unmatched performance and reliability. Trust Fairchild Semiconductor to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the BDW93CFTU and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, making it reliable for long-term use.

Polarity or Channel Type: NPN

Commonly used in general purpose applications, offering versatility and compatibility in various circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE

The Darlington configuration provides high current gain and the built-in diode offers protection against reverse voltage, enhancing overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast switching transitions.

Maximum Power Dissipation (Abs): 30 W

Can handle high power loads without overheating, making it suitable for applications requiring power amplification.

Package Shape: RECTANGULAR

Compact design allows for easy integration into circuit layouts with limited space.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto PCBs, providing a secure and reliable connection.

Maximum Collector-Emitter Voltage: 100 V

Can withstand high voltage levels, making it suitable for applications involving high voltages.

Maximum Collector Current (IC): 12 A

Capable of handling high current loads, ensuring reliable operation in applications requiring high current output.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW93CFTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BDW93CFTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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