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BD652-S

Bourns

BD652-S by Bourns

The Bourns BD652-S is a PNP Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,793 parts In-Stock

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5,793

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Nova Conductors

Japan . 750 parts In-Stock

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750

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VNN

France . 500 parts In-Stock

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500

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Ampacity Inc.

Singapore . 276 parts In-Stock

1+ parts

$11.050

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276

$11.050

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AZTECH Wire

Italy . 1,156 parts In-Stock

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$17.240

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1,156

$17.240

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the unmatched quality and reliability of the BD652-S by Bourns, a leading manufacturer in the electronics industry. This power bipolar junction transistor (BJT) offers exceptional performance and durability for a wide range of applications. With its PNP polarity, Darlington configuration, and high DC current gain, this product is ideal for various electronic circuits. Trust Bourns to deliver superior products that provide value, benefits, and advantages to our customers. Upgrade your projects with the BD652-S today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material makes the transistor durable and resistant to environmental factors, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP polarity makes this transistor suitable for applications where PNP transistors are required, providing compatibility and ease of use.

Configuration: DARLINGTON

Darlington configuration offers high current gain and provides excellent performance in applications requiring high amplification.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various circuits and PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminal form makes it easy to solder and secure the transistor onto a PCB, ensuring reliable connections.

No. of Terminals: 3

3 terminals provide necessary connections for the transistor to function efficiently in a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting on a surface, offering stability and ease of integration.

Minimum DC Current Gain (hFE): 750

High minimum DC current gain of 750 ensures efficient signal amplification and performance in various applications.

Maximum Collector-Emitter Voltage: 120 V

Maximum collector-emitter voltage of 120V allows for safe operation in circuits with higher voltages, adding versatility to the transistor's applications.

Transistor Element Material: SILICON

Silicon transistor element material provides reliability, efficiency, and high performance in various electronic circuits.

Maximum Collector Current (IC): 8 A

High maximum collector current of 8A allows the transistor to handle larger currents, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies the circuit layout and connections, making it easier to integrate the transistor into a design.

Case Connection: COLLECTOR

Collector case connection offers convenient and secure attachment to the circuit, ensuring stable performance and reliable operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD652-S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Bourns

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

BD652-S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Bourns

Bourns, Inc. is an American electronics company that develops, manufactures and supplies electronic components for a variety of industries including automotive, industrial, instrumentation, medical electronics, consumer equipment and portable electronics. Established in Altadena, California in 1947 by Marlan and Rosemary Bourns, graduates of the University of Michigan, the company was founded to develop and sell electronic components and sensors to the aerospace industry. Bourns has 15 manufacturing facilities around the world and has continued growing through the development of new products and technologies as well as through acquisitions. The company has approximately 9000 employees worldwide.

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