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TIP112TIN/LEAD

Central Semiconductor

TIP112TIN/LEAD by Central Semiconductor

TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.

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AZTECH Wire

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Overview

Unlock the power of innovation with Central Semiconductor's TIP112TIN/LEAD Power Bipolar Junction Transistor. Designed for high-performance applications such as amplifiers, this NPN transistor offers exceptional reliability and efficiency. With a minimum DC current gain of 500 and a maximum collector-emitter voltage of 100V, this DARLINGTON configuration transistor delivers optimal performance. Trust Central Semiconductor for quality components that drive your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for package body ensures long-term reliability and ease of handling.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits due to their high input impedance and low output impedance.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making it ideal for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum VCEsat: 2.5 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to efficient operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide secure connections, enhancing the overall reliability of the product.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability allows for use in applications that require handling large amounts of power.

Package Style (Meter): FLANGE MOUNT

Flange mount package style facilitates easy mounting and heat dissipation, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 500

High DC current gain ensures accurate and stable amplification of input signals.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for usage in various environmental conditions without compromising performance.

Maximum Collector-Base Capacitance: 100 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides protection against voltage spikes and overloads.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in electronic devices.

Minimum Operating Temperature: -65 °C

Wide temperature range allows for reliable operation in extreme cold conditions.

Maximum Collector Current (IC): 2 A

High collector current rating enables the transistor to handle large amounts of current without overheating.

Terminal Finish: TIN LEAD

Tin lead finish provides corrosion resistance and ensures good solderability for long-lasting connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the risk of wiring errors.

Nominal Transition Frequency (fT): 25 MHz

High transition frequency indicates fast switching speed, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP112TIN/LEAD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

100 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2.5 V

Trade Compliance

TIP112TIN/LEAD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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