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NJVNJD35N04G

Onsemi

NJVNJD35N04G by Onsemi

NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.

Median Price

$1.090

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.090

10k+ parts

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3,900

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-

$1.090

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.641

100+ parts

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870

$0.641

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Flip Electronics

USA . 3,900 parts In-Stock

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3,900

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Vyrian

USA . 3,595 parts In-Stock

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3,595

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Digiode

USA . 372 parts In-Stock

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372

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Distributors (Availability)

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Corohmni

South Africa . 401 parts In-Stock

1+ parts

$0.628

100+ parts

-

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401

$0.628

-

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Argo Parts USA

USA . 2,886 parts In-Stock

1+ parts

$0.633

100+ parts

-

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10k+ parts

$0.614

2,886

$0.633

-

-

$0.614

Continental Prestige Electronics

USA . 1,867 parts In-Stock

1+ parts

$0.633

100+ parts

-

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10k+ parts

$0.620

1,867

$0.633

-

-

$0.620

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.641

100+ parts

-

1k+ parts

$0.609

10k+ parts

$0.596

100

$0.641

-

$0.609

$0.596

Andel Nordic

Denmark . 3,910 parts In-Stock

1+ parts

$0.790

100+ parts

-

1k+ parts

$0.551

10k+ parts

$0.551

3,910

$0.790

-

$0.551

$0.551

AZTECH Wire

Italy . 447 parts In-Stock

1+ parts

$17.699

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447

$17.699

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Ampacity Inc.

Singapore . 1,167 parts In-Stock

1+ parts

$18.050

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1,167

$18.050

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Kulean Microsystems

USA . 7,494 parts In-Stock

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7,494

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TANS Electronics

Latvia . 6,279 parts In-Stock

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6,279

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Problanco Electronics

Mexico . 4,017 parts In-Stock

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4,017

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SupplyDigital Components

Austria . 3,480 parts In-Stock

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3,480

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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242

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Corphita

USA . 128 parts In-Stock

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128

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Overview

Discover the power of the NJVNJD35N04G by Onsemi, a high-quality Power BJT that delivers superior performance and reliability. Manufactured by industry leader Onsemi, this product is designed for a wide range of applications, offering customers unmatched value and benefits. With its NPN polarity, Darlington configuration, and 4A maximum collector current, this transistor is perfect for demanding projects that require efficient power management. Trust Onsemi to provide top-notch products that exceed expectations and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material provides durability and reliability, making this product a good choice for long-term usage.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into existing circuit designs, making this product a versatile and convenient choice.

Configuration: DARLINGTON

The Darlington configuration offers high current gain and high input impedance, making this product suitable for applications requiring high precision and efficiency.

Surface Mount: YES

With surface mount capabilities, this product is easy to install and secure in place, making it a convenient choice for compact electronic designs.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards, optimizing space usage and promoting efficient thermal management.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and easy soldering, ensuring reliable performance in a variety of applications.

No. of Terminals: 2

With 2 terminals, this product is easy to integrate into circuits and offers simple connectivity options for a wide range of electronic systems.

Maximum Power Dissipation (Abs): 45 W

The high maximum power dissipation of 45W ensures that this product can handle demanding tasks and operate reliably under heavy loads.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVNJD35N04G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVNJD35N04G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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