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NJVNJD2873T4G-VF01

Onsemi

NJVNJD2873T4G-VF01 by Onsemi

NJVNJD2873T4G-VF01 by Onsemi is a NPN BJT transistor with 2 terminals, hFE of 40, and max voltage of 50V. Ideal for amplifier applications, it operates b/w -65 to 175 °C with a max current of 2A. This small outline package has Gull Wing terminals and is surface mountable.

Median Price

$0.666

Lifecycle Status

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13

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1k+

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Farnell

UK . 3,420 parts In-Stock

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$0.945

100+ parts

$0.393

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$0.272

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-

3,420

$0.945

$0.393

$0.272

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DigiKey

USA . 301 parts In-Stock

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$1.330

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$0.549

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301

$1.330

$0.549

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Element14

Singapore . 3,430 parts In-Stock

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$1.720

100+ parts

$0.714

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$0.465

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$0.419

3,430

$1.720

$0.714

$0.465

$0.419

Rochester

USA . 85,900 parts In-Stock

1+ parts

-

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$0.372

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$0.309

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$0.276

85,900

-

$0.372

$0.309

$0.276

Verical

USA . 85,900 parts In-Stock

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$0.386

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$0.344

85,900

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$0.386

$0.344

Mouser Electronics

USA . 10,718 parts In-Stock

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$0.288

10,718

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$0.288

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Digiode

USA . 2,331 parts In-Stock

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$0.618

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-

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2,331

$0.618

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Nova Conductors

Japan . 870 parts In-Stock

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$0.699

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870

$0.699

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Chip Stock

USA . 79,000 parts In-Stock

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Bristol Electronics

USA . 49,946 parts In-Stock

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Flip Electronics

USA . 30,000 parts In-Stock

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Vyrian

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Semi Source

USA . 15,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,250 parts In-Stock

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$0.201

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$0.201

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Semicontronic

India . 62,534 parts In-Stock

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$0.210

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$0.205

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$0.204

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62,534

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$0.204

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Ampacity Inc.

Singapore . 31,024 parts In-Stock

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$0.210

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$0.210

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Corohmni

South Africa . 246 parts In-Stock

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$0.217

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$0.217

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Argo Parts USA

USA . 3,082 parts In-Stock

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$0.351

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$0.341

3,082

$0.351

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$0.341

Corphita

USA . 268 parts In-Stock

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$0.586

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268

$0.586

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Netroflash

USA . 2,000 parts In-Stock

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$0.699

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$0.664

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$0.650

2,000

$0.699

-

$0.664

$0.650

Aztec Data Supply Inc.

USA . 21,690 parts In-Stock

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$1.450

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21,690

$1.450

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Perfect Parts

USA . 4,985,230 parts In-Stock

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Infinite Electronics LLP (Excess)

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Lixinc

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Kulean Microsystems

USA . 6,582 parts In-Stock

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TANS Electronics

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Kepictronics

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SupplyDigital Components

Austria . 1,348 parts In-Stock

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UHIMA Technologies

Türkiye . 466 parts In-Stock

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Problanco Electronics

Mexico . 185 parts In-Stock

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Overview

Discover the power and precision of the NJVNJD2873T4G-VF01 by Onsemi, a cutting-edge Power Bipolar Junction Transistor (BJT) designed for high-performance amplifier applications. With a focus on quality and reliability, Onsemi delivers a product that exceeds industry standards, offering customers peace of mind and confidence in their projects. Whether you're working on audio amplifiers, motor control systems, or voltage regulators, this transistor's NPN configuration and high DC current gain ensure optimal performance. Take your designs to the next level with the NJVNJD2873T4G-VF01 and experience the difference that top-tier components can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and allows for compact packaging, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to implement in various amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy assembly and installation on circuit boards, saving time and effort.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, enhancing its reliability in various environments.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for use in applications requiring higher voltage handling capabilities.

Nominal Transition Frequency (fT): 65 MHz

A high transition frequency indicates the transistor's ability to operate at high frequencies, making it suitable for amplifier applications where frequency response is crucial.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVNJD2873T4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVNJD2873T4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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