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NJVNJD35N04T4G

Onsemi

NJVNJD35N04T4G by Onsemi

NJVNJD35N04T4G by Onsemi is a NPN Darlington BJT with 350V VCEO, 4A IC, and 45W Ptot. Ideal for power applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 90MHz. Package: SOT-223, -65 to 150°C operating range.

Median Price

$0.950

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$1.547

100+ parts

$0.537

1k+ parts

$0.441

10k+ parts

$0.408

1

$1.547

$0.537

$0.441

$0.408

Verical

USA . 2,500 parts In-Stock

1+ parts

-

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$0.352

2,500

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$0.352

Chip1Stop

Japan . 1 parts In-Stock

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1

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Digiode

USA . 482 parts In-Stock

1+ parts

$0.250

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482

$0.250

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.474

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10

$0.474

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Flip Electronics

USA . 35,000 parts In-Stock

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35,000

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NAC Semi

USA . 22,500 parts In-Stock

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$0.770

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$0.770

Vyrian

USA . 4,385 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 563 parts In-Stock

1+ parts

$0.237

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563

$0.237

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Corohmni

South Africa . 66 parts In-Stock

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$0.263

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66

$0.263

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Semicontronic

India . 4,260 parts In-Stock

1+ parts

$0.303

100+ parts

$0.295

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$0.294

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4,260

$0.303

$0.295

$0.294

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Aztec Data Supply Inc.

USA . 143 parts In-Stock

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$0.460

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143

$0.460

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Continental Prestige Electronics

USA . 4,710 parts In-Stock

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$0.474

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$0.465

4,710

$0.474

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$0.465

Argo Parts USA

USA . 2,295 parts In-Stock

1+ parts

$0.474

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$0.460

2,295

$0.474

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$0.460

Netroflash

USA . 100 parts In-Stock

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$0.474

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$0.474

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Ampacity Inc.

Singapore . 4,439 parts In-Stock

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$0.487

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4,439

$0.487

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Problanco Electronics

Mexico . 7,495 parts In-Stock

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TANS Electronics

Latvia . 6,840 parts In-Stock

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Kulean Microsystems

USA . 5,174 parts In-Stock

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Perfect Parts

USA . 2,800 parts In-Stock

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iodParts Technologies Inc.

India . 2,800 parts In-Stock

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SupplyDigital Components

Austria . 979 parts In-Stock

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UHIMA Technologies

Türkiye . 494 parts In-Stock

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494

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Overview

Enhance your power management solutions with the NJVNJD35N04T4G by Onsemi. Designed with top-quality materials and advanced manufacturing techniques, this power bipolar junction transistor offers unparalleled performance and reliability. Ideal for a wide range of applications, from automotive to industrial electronics, this Darlington configuration NPN transistor provides customers with high power dissipation, excellent current gain, and a wide operating temperature range. Trust Onsemi's expertise and choose the NJVNJD35N04T4G for all your power transistor needs.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type : NPN

NPN type transistors are commonly used in amplification and switching circuits, offering versatility and reliability in electronic designs.

Configuration : DARLINGTON

The Darlington configuration provides high current gain and low saturation voltage, making this transistor suitable for applications requiring high power amplification.

Surface Mount : YES

Being surface mountable makes the transistor easy to integrate into compact electronic devices and PCBs, saving space and simplifying assembly.

Maximum Power Dissipation (Abs) : 45 W

With a high maximum power dissipation of 45 W, this transistor can handle significant power loads, making it reliable for demanding applications.

Maximum Collector-Emitter Voltage : 350 V

The high maximum collector-emitter voltage rating of 350 V ensures reliable performance in high voltage circuits, expanding the range of possible applications.

Nominal Transition Frequency (fT) : 90 MHz

The high nominal transition frequency of 90 MHz indicates fast response times and high-speed performance, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVNJD35N04T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVNJD35N04T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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