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NJVNJD1718T4G

Onsemi

NJVNJD1718T4G by Onsemi

NJVNJD1718T4G by Onsemi is a Power BJT with 50V VCEO, 2A IC, and 80MHz fT. Ideal for automotive applications due to AEC-Q101 compliance. Features Gull Wing terminals in a small outline package.

Median Price

$0.865

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

$0.430

100+ parts

$0.420

1k+ parts

$0.410

10k+ parts

-

10,000

$0.430

$0.420

$0.410

-

Mouser Electronics

USA . 2,425 parts In-Stock

1+ parts

$1.300

100+ parts

$0.464

1k+ parts

$0.344

10k+ parts

$0.294

2,425

$1.300

$0.464

$0.344

$0.294

DigiKey

USA . 1,807 parts In-Stock

1+ parts

$1.300

100+ parts

$0.538

1k+ parts

$0.379

10k+ parts

-

1,807

$1.300

$0.538

$0.379

-

Verical

USA . 7,500 parts In-Stock

1+ parts

-

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$0.305

7,500

-

-

-

$0.305

Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

1+ parts

-

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5,000

-

-

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Distributors (In-Stock)

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Digiode

USA . 440 parts In-Stock

1+ parts

$0.912

100+ parts

-

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440

$0.912

-

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-

Chip Stock

USA . 23,000 parts In-Stock

1+ parts

-

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23,000

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Flip Electronics

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Vyrian

USA . 3,319 parts In-Stock

1+ parts

-

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3,319

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

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550

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,740 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

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3,740

$0.820

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-

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Aztec Data Supply Inc.

USA . 4,048 parts In-Stock

1+ parts

$0.860

100+ parts

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4,048

$0.860

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Corphita

USA . 2,100 parts In-Stock

1+ parts

$0.864

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2,100

$0.864

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Corohmni

South Africa . 79 parts In-Stock

1+ parts

$0.960

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79

$0.960

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QUARKTWIN TECHNOLOGY LTD

USA . 22,532 parts In-Stock

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22,532

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iodParts Technologies Inc.

India . 18,132 parts In-Stock

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18,132

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Perfect Parts

USA . 12,432 parts In-Stock

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SupplyDigital Components

Austria . 7,504 parts In-Stock

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7,504

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Kulean Microsystems

USA . 6,929 parts In-Stock

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6,929

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Microchip USA

USA . 5,601 parts In-Stock

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5,601

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Problanco Electronics

Mexico . 2,739 parts In-Stock

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2,739

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TANS Electronics

Latvia . 2,713 parts In-Stock

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2,713

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Continental Prestige Electronics

USA . 2,411 parts In-Stock

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Argo Parts USA

USA . 2,259 parts In-Stock

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2,259

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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648

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Overview

Looking for a reliable Power Bipolar Junction Transistor (BJT) that delivers top-notch performance? Look no further than the NJVNJD1718T4G by Onsemi. With a maximum collector-emitter voltage of 50V and maximum collector current of 2A, this transistor is perfect for a wide range of applications. Whether you're working on automotive electronics or industrial automation, this transistor's SILICON element material ensures durability and efficiency. Trust in Onsemi's expertise and invest in quality with the NJVNJD1718T4G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Maximum Collector-Emitter Voltage: 50 V

Suitable for a variety of low to medium voltage applications, providing versatility.

Transistor Element Material: SILICON

Ensures high performance and reliability in a wide range of operating conditions.

Maximum Collector Current (IC): 2 A

Capable of handling moderate current levels, making it suitable for various electronic circuits.

Nominal Transition Frequency (fT): 80 MHz

Offers high frequency operation, ideal for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVNJD1718T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVNJD1718T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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