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2N6052PBFREE

Central Semiconductor

2N6052PBFREE by Central Semiconductor

2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.

Median Price

$4.981

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$4.981

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$4.981

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Vyrian

USA . 3,570 parts In-Stock

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3,570

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 500 parts In-Stock

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$4.881

100+ parts

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1k+ parts

$4.686

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500

$4.881

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$4.686

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Continental Prestige Electronics

USA . 4,387 parts In-Stock

1+ parts

$4.981

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$4.881

4,387

$4.981

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$4.881

AZTECH Wire

Italy . 767 parts In-Stock

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$13.276

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767

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Argo Parts USA

USA . 521 parts In-Stock

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Overview

Discover the power of Central Semiconductor's 2N6052PBFREE! As a leading manufacturer in the industry, Central Semiconductor ensures top-notch quality and reliability. This Power Bipolar Junction Transistor (BJT) offers exceptional switching capabilities, making it ideal for a wide range of applications. With a maximum VCEsat of 3V and maximum collector-emitter voltage of 100V, this PNP Darlington transistor delivers outstanding performance. Its impressive maximum power dissipation of 150W and minimum DC current gain of 100 further enhance its value. Whether you need it for industrial machinery or electronic devices, the 2N6052PBFREE provides the superior functionality, durability, and efficiency you seek. Upgrade your projects with this remarkable transistor today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better thermal conductivity and ruggedness, making the transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for applications requiring high power and switching capabilities.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for use in applications where high power dissipation is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control and performance.

Maximum VCEsat: 3 V

Low VCEsat value indicates minimal power loss and high efficiency during operation.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation rating, the transistor can handle heavy loads and continuous operation without overheating.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures stable and reliable performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows for use in applications requiring high voltage handling capabilities.

Maximum Collector Current (IC): 12 A

With a high collector current rating, the transistor can handle high current loads without saturation.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency indicates fast switching speeds and high-frequency operation capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6052PBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

500 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2N6052PBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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