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MJE270TG

Onsemi

MJE270TG by Onsemi

MJE270TG by Onsemi is a NPN Darlington BJT with max VCEsat of 3V, hFE of 1500, and IC of 2A. Ideal for power applications, it has a max power dissipation of 15W and operates b/w -65 to 150 °C. Suitable for use in various electronic circuits requiring high current amplification.

Median Price

$1.280

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 781 parts In-Stock

1+ parts

$1.280

100+ parts

$0.533

1k+ parts

$0.377

10k+ parts

$0.289

781

$1.280

$0.533

$0.377

$0.289

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,111 parts In-Stock

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$1.188

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1,111

$1.188

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Vyrian

USA . 8,477 parts In-Stock

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8,477

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Flip Electronics

USA . 2,200 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 935 parts In-Stock

1+ parts

$1.125

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935

$1.125

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Corohmni

South Africa . 223 parts In-Stock

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$1.250

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223

$1.250

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TANS Electronics

Latvia . 8,001 parts In-Stock

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Kulean Microsystems

USA . 6,296 parts In-Stock

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6,296

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Problanco Electronics

Mexico . 5,744 parts In-Stock

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5,744

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SupplyDigital Components

Austria . 4,762 parts In-Stock

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4,762

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 231 parts In-Stock

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Overview

Experience unparalleled power and performance with the MJE270TG by Onsemi. Crafted by a trusted manufacturer, this NPN Darlington transistor is designed for optimal efficiency in a variety of applications. With a maximum collector-emitter voltage of 100V and a minimum DC current gain of 1500, this transistor offers high reliability and durability. Whether you're looking to enhance your power supply design or optimize motor control systems, the MJE270TG provides exceptional value and benefits that will surpass your expectations. Choose quality, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile, making this transistor suitable for a wide range of applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making it ideal for high-power applications.

Maximum VCEsat: 3 V

Low VCEsat minimizes power dissipation and improves efficiency of the transistor.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows the transistor to handle high currents without overheating.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides versatility for different circuit designs and applications.

Minimum DC Current Gain (hFE): 1500

High DC current gain ensures reliable and consistent performance in amplification applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to be used in various environmental conditions.

Nominal Transition Frequency (fT): 6 MHz

High transition frequency enables fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE270TG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

1500

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

MJE270TG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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